Problem

a. Using the approximate characteristics for the Si diode, determine VD, ID, and VR for th...

a. Using the approximate characteristics for the Si diode, determine VD, ID, and VR for the circuit of Fig. 2.154.


b. Perform the same analysis as part (a) using the ideal model for the diode.


c. Do the results obtained in parts (a) and (b) suggest that the ideal model can provide a good approximation for the actual response under some conditions?

FIG. 2.154

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