Question

(b) Consider a single crystal film of thickness hr 100 nm of a SiGe alloy grown epitaxially on a Si substrate of thickness hs 1 mm. The lattice parameter of alloy film is 0.5476nm, while the lattice parameter of Si is 0.5431 nm. The biaxial modulus of Mr (film) and Ms (substrate) are 173 GPa and 180.5 GPa respectively. Assume Poisson's ratio is near to 0. Determine: (i) The mismatch strain of the film with respect to the substrate; (ii) The stress in the film due to the mismatch strain; (ii) The curvature of the substrate containing the film.

Answer 1

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