In the circuit of the figure, the bipolar transistor has a B = 25 and the MOSFET has a VTN = 2V as well as a conduction parameter Kn = 1mA / V ^ 2. Determine the value of the input voltage required for the output voltage Vo = 15V.
In the circuit of the figure, the bipolar transistor has a B = 25 and the...
Part "c" Please! Consider the circuit below. Assume that the only inductance of interest is the load inductor L = 15mH connected to the output terminal. The resistors have the following values: R1 = 5kN, R2 = 2kN, R3 = 0.1kN, and RI, = 10kN. The supply voltage is Vs = 15V. Vs R2 R, vo R1 R3 Figure 6-1 It is known that the input voltage vị can be decomposed into two parts, a constant Vị and a small...
All letters please . In the circuit below, the NMOS transistor has the threshold voltage of V-0.5V.Assume that the MOSFET parameter VA-1/A-40V, operating at the drain voltage VD-2V. (10%) 30 RG vo l0kn a. what region is the transistor operating in? (10%) b. What is the value ofgm? (10%) c. What is the voltage gain vom? (10%)
Score 2. (22 points) For the circuit in Figure 2, the transistor parameters are: 2 0, VN=2V, Ka-1mA/V2, all the capacitors are assumed to act as short circuits at the signal frequency (1) Calculate the Q-point (Vos. I Vos); (2) Sketch the small-signal equivalent circuit, you must label the polarities of the voltages and the direction of the current; (3) Determine the voltage gain A, vo/v (4) Determine the input resistance Ri and output resistance Ro V1 5 10 V...
Consider the following circuit. Assume that the transistor is in saturation with Vds = 2V. Further a.sume that kn = 4mA/V and VTN = 1V. Determine ID, Vo and Vin. 5V T 4.6K Vo Vin 1.4K
Figure 3 Transistor amplifire circuit with source Vs and load R b) For the BJT switching circuit shown in Figure 4, i) Calculate the value of Ra so that the transistor is operating in saturation when switched on if the value of Rc is 3.9 kn. ii) What will the output voltage be for the applied input signal voltage shown if Vcet IS 0.2V? 5 V Re o V 5 V B 100 OV Figure 4 BUT switching circuit with...
Q5 Figure 4 is a common-source circuit. The PMOS transistor parameters are VTP = -0.6V, Kp = 1mA/V and 1 = 0. Assume the transistor is biased in saturation such that Ipo = 0.25mA and Vspo = 1.5V. a) Find Rs and RD- b) Draw the small signal ac equivalent circuit. c) Determine the circuit's input resistance (R.), output resistance (Rour) and small signal voltage gain (Av) Figure 4 = 100k2 RO
Rsig Nahyan vgs ( gmugs, r01 RDS Vsig ) Ril Consider the small signal equivalent circuit of an amplifier shown above. The parameters are given to be: R1 = 3000, R2 = 10160, R2=100%, RD=RL=50 Rsig = 202, VGS1=3.5V. Vt = 0.5V and kn = 1mA/V^2. The transistor output resistances are represented by ro1, ra2 with both the transistors in saturation and having |MAL= 40V and same DC current flowing through them Find the small signal parameter of the MOSFET:...
An amplifier circuit using a bipolar transistor is shown in Figure Q5. (a) State, with a valid reason, whether this amplifier is an emitter follower or a common emitter configuration. (b) Redraw Figure Q5 as a large signal equivalent circuit. Show that: (c) Show that the input voltage, vISAT to produce the onset of saturation for T1 is given by: (d), confirm, by calculation, that T1 is in saturation. (e) Calculate the current in the lamp when T1 is in...
In the circuit in Figure P3.26, the transistor parameters are VTN = 0.8 V and Kn = 0.5 mA/V2. Calculate VGS, ID, and VDS.
An elevation circuit obtained using JFET and MOSFET as follows is available. IDSS= 8 mA, VGSoff= -3V and runpoint current for FET used in the circuit It is 1.42 mA. MOSFET parameters are Kn= 1mA/V2 , VTN= 1V, gm= 0.75 mA/V as a given. The first-floor voltage gain on the circuit is 0.7, and the second-floor voltage gain is -40 calculated as . R7=101R8. According to this; resistance values in the circuit Set to KΩ (given to R2= R3=2K.) n...