Question

The following digital circuit is given: R=5ohms Y CL = 10pF Assume that each gate needs to be implemented as a single-stage CMOS gate (please do NOT combine the logic functions in this circuit and implement it as a single gate). The following technology file is given: ?-300 cm2/Vsec = 100 cm2/Vsec Cox = 10.7 F/cm 2 L = 0.1 ?m he design criteria for this problem assumes that TR TF 100ps at each node, X and he transient current in each gate follows the worst-case charge and discharge paths Here, Tp = 1.4 x RPEQ X CL and TF-1.4x RNEQ x CL Find Wpi and WNI for the inverter, and Wpy and WN for the 2-input NOR gate in microns to satisfy TR-TF-10ps. Note that 1 cm-104 microns, and IF = 1012 pF

Answer 1

사 10 Flm Noo 0.6 V 1oops pp Cand ㄒ Rpte PE NE

X C TRこ 100 PS 100 x 10 x Oul10 100m x 10 x IC 100 x 10-1 0 (3-0.) 100 x o ( 3-o-6) 100 хое Ts 300 (306)100 xI6e WNIq.quxIo

Y CL ㄒ 100 x 16" С 3-0-6) x 10x1013 Ap583. 33 x103 Lu 300 x 10 3-06) lo x Io Te