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Polysilicon (Top Electrode) Air SI, Bulk Silicon Substrate Figure 1: Cross-section depiction of an electrostatic parallel pla
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(b) Pull in distance If the electrofatie fone is increased by increasing the applich woltage and if that fone as greater thanson 11521310 T utti = 3 Thickness 224m Tro 529 low 2017 - hapblo Top & ballom K plates=24m plov 1 = 100hPa blwtop=2km & boltePull in rottage It is one of the important parameters of meme design the pull in voltage is inversely propational to the actuThickness 1botimx idolin - atima Capblw = 2tim topf = 100upa bottom plates 2 2 fm- Width of flexure

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