Question

Using MULTISIM SIMULATION PLEASE!!!

Reversed Vascu Procedure II: Diode Characteristics: 1. Wire the circuit shown in Figure B. 3300 LA Vs Vd = (0-15V) Figure B Diode Characteristics pote Mode is defined as The dy to the dio rent through

using multisim please

Answer 1

The given question is VI characteristics of the Diode. entire question answered based on multisim software and curves dreawn using microsoft excel tool.

the answered attached in pasted form

Diode fordward bias circuit

R1 330ohm Multimeter-XMM1 V1 D1 15V 1N4007GP 45.455 mA XMM1 dB Set.

Vs(V)	VD(mV)	ID(mA)
1	483.927	3.030
2	548.541	6.061
3	580.539	9.091
4	601.854	12.121
5	617.845	15.152
6	630.647	18.182
7	641.324	21.212
8	650.485	24.242
9	658.511	27.273
10	665.655	30.303

VI characteristics of forward bised Diode:

35 30 25 20 15 10 100 200 300 400 500 600 700

X axsi is volatge(mV) , y axis is ID(mA)

Static resistance is V/I

Dynamic resistance is Delta V/Delta I

Diode Reverse bias circuit

R1 330ohm V1 D1 10V 1N4007GP XMM1

Vs(V)	VR(mV)	IR(mA)
1	999.799	3.030
2	2	6.061
3	3	9.091
4	4	12.121
5	5	15.152
6	6	18.182
7	7	21.212
8	8	24.242
9	9	27.273
10	10	30.303
15	15	45.455
20	20	60.606

Diode reverse bias characteristics

Explanation: Diode cut in volatge is 0.7V for silicon diode, diode is off in reverse bias acts as open circuit, so voltage appeared acroos diode is input voltage itself.

X axis is Diode voltage negative, current is reverse current

-25 -15 -20 -10 -5 -10 -20 -30 -40 -50 -60 -70

Static resistance of diode in reverse bias at 10 V 999.978 Mohm

Diode forward current is 8.00mA at input volatge of 2.64 V observed from graph at this point static rsestnace is 57.074 Mohm

Diode forward current is 2.00mA at input volatge of 0.66 V observed from graph at this point static rsestnace is 43.276 Mohm

Dynamic resistance is calculated based variation of two points voltage corresponding current points.