Question

For the following problems, assume: The cross-sectional area is 250 um x 250 um. The minority carrier lifetime on the p-side is 100 ns. • The minority carrier lifetime on the n-side is 10 us.

Parts A,B, and C (All if possible). "Code" could just be the set of equations plugged into a graphing program (such as Desmos).

Answer 1

2) (a) According to Reverse saturation current formula Фр Dn= pup un ve

Here Vp = 26 mv (known) up= 500 cm (sec-V _ Zsilicon Un = 1300 cm²/v-sec Dp = 26x103 x 500 I = 13 cm/sec Dn = 26X103 x 1300 = 33.8 cm /sec

A = Area = 250 x 106 x 250 x 156 m² = 62.5 x 125 cm² for silicon intrinsic value ni = 1.5xido 1 cm3 Is = 10681819 x 62.5 x 105 x (1.5x100 I 133-8 113 107 / loono lolo 10x156 225 X + 183.847 10 1140175 2 1017 2.606 xl