Question

Silicon carbide nanowires of diameter D - 20 nm can be grown onto a solid silicon carbide surface by carefully depositing droplets of catalyst liquid onto a flat silicon carbide substrate. Silicon carbide nanowires grow upward from the deposited drops, and if the drops are deposited in a pattern, an array of nanowire fins can be grown forming at silicon carbide nano-heat sink. Consider finned and unfinned electronics packages in which an extremely small, 10m x 10 m electronics device is sandwiched between two d=100-nm-thick silicon carbide sheets. In both cases, the coolant is liquid water at 20°C. The exposed silicon carbide fins are L = 400 nm long. The nano-heat sink includes an array of nanofins, and the spacing between two neighboring fins is 20 nm. The water flow velocity in both cases is 2 m/s Determine the maximum allowable heat rate that can be generated by the electronic device so that its temperature is maintained alt < 85°C for the unfinned and finned packages. V 10 m Th

Answer 1