Question

14. Reverse breakdown in junctions is known to occur by two mechanisms - the Zener effect and th avalanche breakdown. Which one of these mechanisms causes a breakdown at relatively high reverse bias value in lightly to moderately doped semiconductors and what are the physical processes responsible for it? 15. How does charge carrier generation in the depletion region affect the I-V dependence of a real p-r unction under a reverse bias? (explain and/or sketch the ideal and the real dependence) ue or False? MESFETs a field-effect transistors with a thin oxide laye e or False? Unlike p-n junctions or Eala

Answer 1

Ans 14:-