Question

Strained-Si (10%) nd nMOS made on Hitachi's SiGe Virtual Substrate, published at IED 2001, demonstrated excellent performance of both What are the major physical reason to prevent this tec (b) What are the methods to apply strain into Intel's p- and higher electron and hole mobility hnology into real manufacture n-MOS?

Answer 1

A)The Band OFFSET in SiGe is used to increase mobility.

1)for p - MOS most holes in the channel are confined to SiGe

2)for n-MOSFET a fraction of channel electrons move in SiGe

Band offset and strain properties improve performance

The Band OFFSET in Si Ge is used to increase mobility. 1)for p - MOS most holes in the channel are confined to Si Ge 2)for n - MOSFET a fraction of channel electrons move in Si Ge Band offset and strain properties improve performance introducing Ge in Si - mos improves performance an additional increase in mobility is induced by strain NMOS strain was introduced by adding a high-stress layer that wrapped around the transistor (a process some times named CESL, or contact etch-stop layer after the most common layer used for the stress or). PMOS strain was introduced by replacing the conventional source/drain region with strained Si Ge (a process often called embedded-Si Ge or e-Si Ge). The addition of strain in both NMOS and PMOS enhanced the channel mobility, resulting in improved drive current (and improved performance) for both NMOS and PMOS.

introducing Ge in Si-mos improves performance

an additional increase in mobility is induced by strain

B) NMOS strain was introduced by adding a high-stress layer that wrapped around the transistor (a process sometimes named CESL, or contact etch-stop layer after the most common layer used for the stressor). PMOS strain was introduced by replacing the conventional source/drain region with strained SiGe (a process often called embedded-SiGe or e-SiGe). The addition of strain in both NMOS and PMOS enhanced the channel mobility, resulting in improved drive current (and improved performance) for both NMOS and PMOS.