6. Calculate γ and β for an NPN and a PNP BJT having the parameters: NE=10^19 cm-3 , NB=10^17 cm-3 , WE= 3 μm, WB= 1 μm, Dn (at 10^19 cm-3 )= 2.5 cm2 s -1 , Dp (at 10^19 cm-3 )= 1.5 cm2 s -1 , Dn (at 10^17 cm-3 )= 20.69 cm2 s -1 , Dp (at 10^19 cm-3 )= 8.275 cm2 s -1 , tn=tp=0.1 μs.
6. Calculate γ and β for an NPN and a PNP BJT having the parameters: NE=10^19...
A Si pnp transistor has the following properties at room temperature: 4. .ni-1.5x1010 cm3 tn-tp 0.1 us . DnDp-10 cm2/s NE-5x1018 cm3 Ng-N-1016 cm3 Emitter width: wF4 μm Distance from base/emitter interface to base/collector interface: W-1 um Cross-sectional area: 10 cm2 α 0.9948 (5 points) (5 points) a. Calculate the neutral base width (Ws) for Vco 0 and VEB 0.6 V. b. Calculate β, le, la, and lc for Vc8-0 and Vea-0.6 V A Si pnp transistor has the following...
4. The driver stage of a power amplifier is often a PNP-NPN Class-AB pair. It is important for the two transistors in the pair to have identical values of Bic Both transistors have base width W= 1.0 μm . The PNP device has N,-1016cm-3, For Si, the diffusion constants and lengths are: D./D, 3.3333; L/L,-1.8257; L-0.3116 cm; L, 0.1707 cm. For the NPN device BiIf NE 10'" cm 3 for the NPN device find the required N HINTS: The expression...