Question

Q1

Electron-beam lithography has long been used to write the desired pattern directly onto the wafer.

Select one:

True

False

Q2

Antenna rules are checked during layout which limit the ratio of the area of the metal wires used to connect the gates of MOSFETs, to the area of these thin MOSFET gate oxides.

Select one:

True

False

Q3

Copper metallization uses a single damascene process to create vias, which connect adjacent copper metal layers.

Select one:

True

False

Q4

Dopants can be added to silicon in which of the following ways?

Select one:

a. Solid-source doping, where the dopants are shot into the silicon at high energies

b. Ion implantation, where a gas containing the desired dopants is introduced into the furnace

c. Gas-source doping, where the wafer is coated with a thin film containing the desired dopants

d. None of these

e. Diffusion, where the dopants naturally diffuse deep into the silicon

Q5

Which of the following doping methods can only be used for arsenic?

Select one:

a. None of these

b. Gas-source doping

c. Solid-source doping

d. Diffusion

e. Ion implantation

Answer 1

Ans1: False

Electron beam lithography is used to pattern the resist layer.

Ans2: True

Ans3: False

Copper metallization uses a single damascene process to create holes(vias), which connect underlying copper metal layers.

Ans4: B.

Ans5: D. Arsenic has very small diffusivity, and thus the diffusion of arsenic is highly controllable.