Question

Design and sketchc masks to be used with negative photoresist for making an array of five wires of smallest width 2 μm on a silicon wafer. The wires are to be connected at each end to contact pads (1 mm2) for wire bonding. The wires are to be broken to have 20 nm gaps. What technique would you use to do this? The wire to be broken must be thin (no more than 50 nm) but the contact pads need to be thick (1 μm) for wire bonding. Outline the steps you might take to make the final device. You may have to research resist treatments for lift-off.

What effect might the Ga deposition have on the conductivity of the gaps?

Answer 1