6. A long p-type Si bar, NA-5x1016 cm3, is optically excited and creates a low level of steady st...
6. A long p-type Si bar, NA-5x1016 cm3, is optically excited and creates a low level of steady state excess carriers at on the left side of the bar (x-o) creating a quasi-Fermi level separation of (E-Fp)-0.42 eV. The carriers diffuse to the right and decay exponentially. Electron and hole lifetimes are both 5 μs Also, it is room temperature, D,-18 cm2/s, Dn-36 cm3/s, and n#1.5x1010 /cm? what is the electron . concentration and current density (A/cm2) at x 50 um? (10 points)
6. A long p-type Si bar, NA-5x1016 cm3, is optically excited and creates a low level of steady state excess carriers at on the left side of the bar (x-o) creating a quasi-Fermi level separation of (E-Fp)-0.42 eV. The carriers diffuse to the right and decay exponentially. Electron and hole lifetimes are both 5 μs Also, it is room temperature, D,-18 cm2/s, Dn-36 cm3/s, and n#1.5x1010 /cm? what is the electron . concentration and current density (A/cm2) at x 50 um? (10 points)