Question

FET Cuto Linear Mode К Сок Power Dissipation Ponn+" Power during switching . C1-Vvw' Pue Power during static case VDD-(olOH)lol))/2 Width of the Length of the semiconductor Oxide Capacitance per Unit Area Permittivity of SiO Thickness of gate oxide Process trans conductance parameter Device trans conductance parameter Totall load capacitance Exevcse f) Caloulate the power dissipated due to switching and that dutaverage umen for the output high and low Exerche (2 the MMOS transistor withthetalowerg Exercise (非 vus.sv.vos . 2v,vt.1V.W.DD㎛.1+5㎛.r.20㎂w

Answer 1

PD ( Оし)//-2 Dp pp(DH) + 387.5 uW A/V

Cm rn Ds 3 as Com Sum , exercise-