Question

100 um <110> 100 Hm anisotropically-etched cavity in silicon. The top surface of the wafer is <100. What is the size of the o

taking into account of lateral undercut underneath the original mask? Here, assume that the etch rate in the <111> direction

0 0
Add a comment Improve this question Transcribed image text
Answer #1

Col Surface1007 ToP min X 60pm/hy Sndirectio 14. 3 Hm/hY O5 Um min xbo Tolal ecb Yate - o 6t 0.05t 3 3.65 Hmhr wCize of 6T-3

Add a comment
Know the answer?
Add Answer to:
100 um <110> 100 Hm anisotropically-etched cavity in silicon. The top surface of the wafer is <100. What is t...
Your Answer:

Post as a guest

Your Name:

What's your source?

Earn Coins

Coins can be redeemed for fabulous gifts.

Not the answer you're looking for? Ask your own homework help question. Our experts will answer your question WITHIN MINUTES for Free.
Similar Homework Help Questions
  • (20 pts.) Question 3 Al um film of silicon dioxide is to be etched with an etch rate of 800 nm/min. Process data sh...

    (20 pts.) Question 3 Al um film of silicon dioxide is to be etched with an etch rate of 800 nm/min. Process data show that the thickness may vary up to 3% and the etch rate may vary up to 5 %. (i) specify the time duration that verifies the etching process clears the oxide film from all the exposed areas of the wafer; (ii) For this time duration, calculate how much undercut will occur at the top and bottom...

  • A c100-oriented silicon erystal is etched in a KOH solution through a 1.5 um x 15...

    A c100-oriented silicon erystal is etched in a KOH solution through a 1.5 um x 15 Hm window defined in silicon dioxide. The etch rate normal to (100) planes is 0.6 pm/min. The etch rate ratios are 100:16:1 for the (100):(110):(111) planes. Show the etched profile after 20 seconds, 40 seconds, and 60 seconds.

  • 1. Start with bare (111) silicon wafer. You want to grow 1 um of SiO2 using...

    1. Start with bare (111) silicon wafer. You want to grow 1 um of SiO2 using dry (for the first 500 Å) and wet oxidation at 1,000 °C. Calculate total time. 2. Local oxidation is a process that is widely used to provide lateral isolation between devices in IC chips. In some cases, it is desirable to end up with a more planar surface than standard LOCOS provides, and so a silicon etch is used prior to the oxidation step...

ADVERTISEMENT
Free Homework Help App
Download From Google Play
Scan Your Homework
to Get Instant Free Answers
Need Online Homework Help?
Ask a Question
Get Answers For Free
Most questions answered within 3 hours.
ADVERTISEMENT
ADVERTISEMENT
ADVERTISEMENT