100 um <110> 100 Hm anisotropically-etched cavity in silicon. The top surface of the wafer is <100. What is t...
(20 pts.) Question 3 Al um film of silicon dioxide is to be etched with an etch rate of 800 nm/min. Process data show that the thickness may vary up to 3% and the etch rate may vary up to 5 %. (i) specify the time duration that verifies the etching process clears the oxide film from all the exposed areas of the wafer; (ii) For this time duration, calculate how much undercut will occur at the top and bottom...
A c100-oriented silicon erystal is etched in a KOH solution through a 1.5 um x 15 Hm window defined in silicon dioxide. The etch rate normal to (100) planes is 0.6 pm/min. The etch rate ratios are 100:16:1 for the (100):(110):(111) planes. Show the etched profile after 20 seconds, 40 seconds, and 60 seconds.
1. Start with bare (111) silicon wafer. You want to grow 1 um of SiO2 using dry (for the first 500 Å) and wet oxidation at 1,000 °C. Calculate total time. 2. Local oxidation is a process that is widely used to provide lateral isolation between devices in IC chips. In some cases, it is desirable to end up with a more planar surface than standard LOCOS provides, and so a silicon etch is used prior to the oxidation step...