Question

nearly identical devices (Device A: SiO2 gate dielectric, (d) When one student compared the DIBL for two Device B: HfO2 gate dielectric) with the same EOT and EOT¢, it was found that Device B actually exhibited larger DIBL. Please give a physical explanation for him. (3pts) (e) Why the modern bulk MOSFET has to MOSFET can allow light channel doping? (2pts) (f) Besides electrostatic integrity, what is the main advantage of FinFET as body SOI MOSFET? (2pts) employ heavy channel doping, while the ultra-thin-body SO compared with the ultra-thin- 3

Answer 1

chann dopg fet MoS FET ahelectri lyer t>een don w nelies channel and ubshat y contro chae and leakoge. iphter have we Over exer threkness -the Can be oda ma tiner and Can be chanel t all, mki itfutly need-to dope deple ted mt gupportd equires hery ehanrel capi bulk MOSFET and FINFET So1 MOSFET wbile ransiton to EiNFET aquined many dergn ond meufadtoni ng esorystens aelatvelyo adjustrn FDSO the wofer For Coagt i bulk uaa fer