Professor: Farid Tranjan +5 V Name:- 0.7V (50 points). Q1: For the BJT circuit, B- 100...
(20 pts) The BJT in the circuit below has the following specifications: • in active mode ß = 50, VBE = 0.76 V, and • in saturation VCEsat = 0.2 V. Find VE, VB and Vc and determine the mode of operation (active, saturation, cut-off). Given values are: /= 1 mA, Rg=200 kN and Re =4 k12. I Vc RB VB. VEم RE
RE -3.3k2 Figure 5. Vbe-0.7V (active), Vce 0.2V (saturation), p-100 For the circuit shown in Figure 5: a) If V oV DC, find the DC bias point for Q1? b) Draw the small signal equivalent circuit and evaluate the small signal AC voltage gain. c) Sketch le vs Vce and show the operating point for the transistor. d) How would you change the bias to obtain maximum signal swing?
Avec Úvo SRE L V II. (5pt) Consider the above-right common-collector or emitter-follower BJT amplifier circuit. Given: ß= 100, RE = 10 k1, Vcc = 20 V, RB = 5 k1, R1 = 10 kl, and Ry = 2 k1. (a) (1pt) Find the Q-point, i.e. Ibo, Ico, and VCEO; (b) (1pt) draw the small-signal equivalent circuit assuming that the capacitors (C, and Cy) are short circuits for the small signal; (c) (1pt) solve for the voltage gain, Av; (d)...
Q1. For the cascade amplifier circuit shown in Fig (1): a) What are the functions of the capacitors C, C2 and C3? And what are the functions of the capacitors Cs and CE? b) What are the functions of the resistors RD and Rc? c) Draw the DC biasing circuits for each stage. d) Find loa, VGsa, VDs and gm for the JFET stage (you may use either mathematical or graphical methods) e) Calculate l, Ic, le and Ve for...
D 6.112 The MOSFET in the circuit of Fig. P6.112 has = 5 mA/V, and V, = 40 V. (a) Find the values of Rs,RD, and RG so that ID=0.4 mA, the largest possible value for R is used while a maximum signal swing at the drain of +0.8 V is possible, and the input resistance at the gate is 10 MS2. Neglect the Early effect. (b) Find the values of gm and r, at the bias point. (c) If...
D-17.121 The MOSFET in the circuit of Fig. P7.121 has V, 0.8 V, k,-5 mA/V", and V,-40 V (a) Find the values of Rş, Rp, and Ro so that Ip 0.4 mA, the largest possible value for Rp is used while a maximum signal swing at the drain of ±0.8 V is possible, and the input resistance at the gate is 10 M2. Neglect the Early effect. (b) Find the values of g and r at the bias point. (c)...
4. The MOSFET in the circuit given below has Vi- 1 V, kn 0.8 mA/V2, and VA 40 V a) Find the values of Rs, Ro, and Ro so that Io -0.1 mA, the largest possible value for RD is used while a maximum signal swing at the drain of tl V is possible, and the input resistance at the gate is 10 MS2. b) Find the values of gm and ro at the bias point c) If terminal Z...
Question 4 (25 Marks) (5) 1. Derive the Dynamic Emitter Resistance, re that is used in the re-model small-signal analysis of BJT. 2. The circuit in Figure 7 shows the multistage cascade of two single transistors with B=100. Given the value of Vpp=12 V, R1=120 kN, R2=40 kN, R3=100 ks, Ra=30 kn, RE1=3.9 kN, Rez=4.5 kN, Rc1=6.5 kN, Rc2=8 ks, (2) (4) (a) Identify the transistor configuration for all stages. (b) Determine the d.c collector current (Ici and I cz)...
can you do 4.83 Ar- Q Sea 100 V, what does the gain become? age at the collector. (b) Replacing the transistor by its T model, da the small-signal equivalent circuit of the a plifier. Analyze the resulting circuit to dete mine the voltage gain t/ 04.81 Consider the CE amplifier circuit of Fig. 4.43(a). It is required to design the circuit (i.e., find values for I and Rc) to meet the following specifications: (a) R,5kn (b) the voltage gain...
2. For the common-emitter amplifier. B= 50. Vcc=12 a) Draw small signal circuit b) Find vout/vin Find Zin and Zou Vcc R1 27k R2 2.2k Zout Zin Vo 4 C1 16 BIG Q1 NPN V1 C2 V R3 15k RE 1.2k BIG