Consider the semiconductor CdTe (the material in the most cost-effective solar panels sold today).Its bandgap is 1.49 eV, and the effective masses of electrons and holes are .098 me and .145 me, respectively. The material is relatively intrinsic. Determine the number of thermally excited electrons per cubic centimeter at 300K.
Consider the semiconductor CdTe (the material in the most cost-effective solar panels sold today).Its bandgap is...
Consider the semiconductor CuInSe2. Its bandgap is 1.0 eV, and the effective masses of electrons and holes are .09 me and .72 me, respectively. If the material is doped such that the Fermi energy is .1 eV above the valence band edge, determine: (a) the number of electrons in the conduction band per cubic centimeter and (b) the number of holes in the valence band per cubic centimeter.
Consider a semiconductor material X, with the following parameters at a room temperature of 300K: Energy bandgap of Eg = 1.15 ev, density of states at the Conduction band edge of Nc = 4.8e+23, effective density of states at the Valance band edge of Nv = 1e+25, drift mobilities of the electrons and holes, ue and uh, such that ue =0.4 and uh = 0.02. (1) What is the intrinsic concentration and conductivity of 'material x' at room temperature 300K?...