Question

Finish Part 2 calculations with the data and equations given above.

Intrinsic Carrier Concentrations: n 2e6 cm3 and Eg 1.42eV for GaAs n 1e10 cm3 and Eg 1.1eV for Si n 2e13 cm3 and Eg = 0.7eV for Ge n 0 and Eg 3.4eV for GaN Charge Neutrality Equation and NP product: 1/2 ((NA-Np) ni (NA-No) p = 2 2 . 1/2 (No-NA) (No- n 2 2 Fermi Energy Level Equation: E,-E, kT In =-kT In Part 2, Calculation: For the following questions give the electron concentration (n), hole concentration (p), Relative Fermi Energy Level (Er-E), state whether the material is degenerate, and draw/label the energy band diagram 1. GaAs@T 300K, where No Se3 cm3 and NA le15 cm 2. GaN@T 600K, where No 1e5 cm3 and Na 1e2 cm 3. Ge @T 450K, where No Se13 cm3 and NA 0 cm3 4. Si@T 1200K, where No le20 cm and NA 1e7 cm

Answer 1

Part 2 Ga As T: 300k NA= 1XI05 cm 3 N,: 5xi3 c3 sni=2X10S cm 3 Eq : 42 ev Electron concent sation h = (ND-NA(NNA) 2P 2 V/2 n=Np- NA NO-AA12 +n 2 2. '/2 (aXxio 2 n5x-2x 1o 2 (5x03105 Q2 2 /½ xdy 29 2.5K 10 t 4x lo 2 e 9 3

/2 P: NA-ND (NA-ND) + 2 2 10 S Sxio5-5X10 P- 2 2 2 1/2 2 P SX10 29 + 4X10 2.5X10 P - Q 5X489 29 25X10 cm CM Fermilevel energy equakion Ep-EKTIn ni 25 mu Ep-E 2Xid 133 ev EF-ET T: 600k where Na IX10 cm3 NA toems GaN 2 SE9 3.4 ev 72 eletron concenkration(n) = No"NatNo Ntni 2 2- 2 n= 105-10 P12 1O-10 COj 2 2 n:499 50 99900 t499 50

Hole concentrotion (p) NA-N ND +n N 2 2 P: 10-105 2 Cojz/2 2 2 P2 -49950+ Fermi level equation -5 8-33X10 krin() EF-E: kT In - 0 c EF-E Smo In(0) Ge@ T:4Sok Np 5x Na Ocm3 X10 Electron concent xatton(n): Na +Cn 2 2 2 n=sx183 2 2 13 no2.5x16t 6.Rsxi86+4 x 1026) /2 13 3 Cm n: 5.7 x10

hole concentsatron (P) NA-NNA-ND 2 2 2 2 2 P O-O + + 2. 2 /2 P -2-5x1d3 26y 6.25 X10+ (4 X106 リ2 +4) 4(6254 P2-2.5X10+ 13 P 25X 10 P2 -2.5X10 3.2 x103 103 (-2.5+32) P - P 2 0.7xlo3 cm3 () 833 10159)n EF-E KTn 5-7 EF-E O.0375 2 O.0 3927 0.04 ev EF E