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Si material parameters: Band gap energy at 300 K: Eg = 1.124 eV Relative permittivity: x = 11.7 Effective mass of electron: m

GaAs material parameters: Band gap energy at 300 K: Eg = 1.42 eV Relative permittivity: x = 13.1 Effective mass: m = 0.068m m

Physical Constants: Vacuum permittivity: £. = 8.85 x 10-14 F/cm Plancks constant: h=6.63 x 10-34 Jos Speed of light: c= 3.0

7. Mobility and Conductivity, Part 1 GaAs is doped with both donors and acceptors with densities, Np=1x 108 cm-and NA= 5 x 10

8. Mobility and Conductivity, Part 2 Using the GaAs parameters given above, calculate the conductivity in S.cm-1 if the semic

9. Mobility and Conductivity, Part 3 GaAs has an intrinsic carrier concentration of na = 9 x 108 cm and electron and hole mo

10. Mobility and Conductivity, Part 4 For the semiconductor described above, calculate the minority carrier concentration in

11. Mobility and Conductivity, Part 5 GaAs has an intrinsic carrier concentration of mi = 9 x 106 cm 3 and electron and hole

science   Advanced-Physics   
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Answer #1

. in an extrinsic semiconductor NINA = pt No - no free election concentration . pt free hole concentration Ausz if NA> No the

6=(20.25 x104x88 00 + 4X10fx400) 9 = 161782 X106X168109 = 2.588512 X168 sem! . Aus.) No=NA = 5x108 cm3 from equation ③ we obt

n=n I. In un tp up q =10 (n unt pelup) q = lop (81x105x8800 + P2400) 7:6X1699 = 10p 1140480 X10* + px 640 x 10?1 = 10p. P² +

Ansll) length of the semiconductor(d) = 100 ilmia. 100 x 10 cm e = 10² cm V cross sectional area = 200 um 2200x104cm = 2x10²

6- । 40.8 X10 now R-1 Scm. (हन लयाउनको 104 - 140.९ / 2x10-2 140X102 04 । - ? - 35.5|| 3641 ... 2X140.8 2 - Y: समा - . 0.05639

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