Question

Problem 1 Using what we have leamed in chapter 1, derive, for a semiconductor, the expressions of The total current density Conductivity - Problem 2 Consider Germanium sample with the following characteristics the electron and hole mobility for Ge is 0.39 and 0.19 m2N.s The electron and hole effectives masses are 0.56me and 0.4 me The energy gap is 0.67 eV at T-27°C 1) 2) Find the intrinsic carrier concentration for Ge What is the resistivity of the Ge sample Problem 3 Review the steps we followed to derive the expression of the intrinsic carrier density Problem 4 Consider a silicon p-n junction with the p and n dopant concentrations of NA-1014 cm3 and ND- 105 cm3, respectively. a) Calculate the forward voltage the built-in voltage at room temperature b) Calculate the depletion layer width W in micron c) Calculate the capacitance of the p-n junction in F/cm2 d) What is the junction capacitance at a reverse bias voltage of 5 Volts? Assume the permittivity of silicon is 10:0 and the intrinsic carrier concentration is 1010 cm-5 Problem 5 Suppose ND l 010 cm-3, NA-l 010 cm -3, and the intrinsic carrier concentration is 1010 cm-3. Calculate the ratio xn/Xp where -Xp and Xn are the lower and upper location

Answer 1

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