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A pn junction diode is made of a new semiconductor with 10^16cm-3 donors in the n...

A pn junction diode is made of a new semiconductor with 10^16cm-3 donors in the n side and 2x10^17cm-3 acceptors on the p-side. Intrinsic carrier concentration is same as silicon 10^10cm-3at room temperature. Let's assume that a forward bias voltage is applied in a way that it create following minority carrier concentrations in quasi neutral regions. p(x) =10^4 + 10^14/[1+10^4(x-xn)] (cm-3) where x>xn>0 and n(x) = 500-10^15/[10^4(x+xp)-1] (cm-3) where x<-xp<0. x is given in cm scale. Calculate the total current density propagating through this diode? Assume diffusion constants for electrons and holes are 24cm^2/s and 8cm^2/s, respectively, and minority carrier lifetimes for electron and holes are 0.1microseconds. (Answer in A/cm2)

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