Question

23 20 at 9pm structions questions. When you finish the frst question please click on NEXT to go to the second question. ME BACK. Do not click"next" button before finishing your first question. DO NOT click on SUBMI questions. Question 2 60 pts A pn junction diode is made of a new semiconductor with 1016cm3 acceptors in the p side and 2x1017cm3 donors on the n-side. Intrinsic carrier concentration is same as silicon 1010cm3 at room temperature. Let's assume that a forward bias voltage is applied in a way that it create following minority carrier concentrations in quasi neutral regions. n(x) 104-1014/104x+xp)-1] (cm3) where x<xps0 and px)- 500+1015/1104txn)+11 (cm-3) where x>xn 0. x is given in cm scale. Calculate the total current density propagating through this diode? Assume diffusion constants for electrons and holes are 26cm2/s and 9cm2/s, respectively, and minority carrier lifetimes for electron and holes are 0.1microseconds. (Answer in A/cm2) 1 Previous No new data to save. Last checked at 9:31pm Submit Quiz

Answer 1