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1252 407 3. At 300 K the electron mobility in n-type silicon in cm?N.s can be...
An n-type silicon with No = 1 x 1015 cm'has hole and electron mobility values of...
An n-type silicon with No = 1 x 1015 cm'has hole and electron mobility values of 500 cm/\-sec and 1500 cm²/.sec respectively. The semiconductor is maintained at 300 K. Excess hole concentration varies with distance (x) as p(x) = 1015 exp ( -.) cm3 Calculate hole diffusion current density at x = 0 and x=Lp if the lifetime of holes is 0.01 us.
The compensated n-type silicon at 300 K has a conductivity: 16 (ohm-cm)-1 and an acceptor doping...
The compensated n-type silicon at 300 K has a conductivity: 16 (ohm-cm)-1 and an acceptor doping concentration: 1017 cm-3. a) Express the mobility as a function of the doping concentration. b) Calculate the mobility and conductivity when Nd=2 1017 cm-3.
P4. Find the resistivity at T 300 K for a silicon sample doped with 1 x 10cm of phosphorus (P) atoms, 8.5 x 10 cm o...
P4. Find the resistivity at T 300 K for a silicon sample doped with 1 x 10cm of phosphorus (P) atoms, 8.5 x 10 cm of arsenic (As) atoms, and 1.2 x 103 cm3 of boron (B) atoms. Assume that the impurities are completely ionized and the mobilities are μ,-1500 cm2/V-s, μ,-500 cm2/V-s, independent of impurity concentrations. Also assume intrinsic carrier concentration of Si n 1.5 x 10 cm). Hint!!; we can usually use the rule for compensated semiconductors as...
A silicon semiconductor material is doped with 3x1015/cm of phosphorous atoms at room temperature (300°K). Given:...
A silicon semiconductor material is doped with 3x1015/cm of phosphorous atoms at room temperature (300°K). Given: Electron mobility is 1450 cm2/V-s, Hole mobility is 380 cm?/V-s, Intrinsic carrier concentration (n) of Si at room temperature (300°K) 1.5x 101%cm³. Calculate the conductivity of the material
Find the resistivity at 300 K for a silicon sample doped with 1.0 times 10^14 cm^-3...
Find the resistivity at 300 K for a silicon sample doped with 1.0 times 10^14 cm^-3 of phosphorous atoms, 8.5 times 10^13 cm^-3 of arsenic atoms, and 1.2 times 10^13 cm^-3 of boron atoms. Assume that the impurities are completely ionized and the mobilities are mu_n = 1500 cm^2/V-s, mu_p = 500 cm^2/V-s, independent of impurity concentrations.
P5. The electron concentration in silicon at T 300°K is given by n (x) = 1016 exp (-x/18)/cm' where x is measur...
P5. The electron concentration in silicon at T 300°K is given by n (x) = 1016 exp (-x/18)/cm' where x is measured in um and is limited to 0 SxS 25 um (also 18 has a unit of um). The electron diffusion coefficient is D.-25 cm2/sec and the electron mobility is -960 cm2/V-sec. The total electron current density through the semiconductor is constant and equal to J- 40 A/cm2. The electron current has both diffusion and drift current components. Determine...
1. (a) Calculate the value of ni for gallium arsenide (GaAs) at T = 300 K....
1. (a) Calculate the value of ni for gallium arsenide (GaAs) at T = 300 K. The constant B = 3.56 × 1014cm−3K 3/2 and the bandgap voltage Eg = 1.42 eV. [5 marks] (b) In a phosphorus-doped silicon layer with impurity concentration of 1017/cm3 , find the hole and electron concentrations at 27oC and 125oC [5 marks] 2. A young designer, aiming to develop intuition concerning conducting paths within an integrated circuit, examines the end-to-end resistance of a connecting...
3. A silicon step junction has uniform impurity doping concentrations of N. 5 x 1015 cm-3 and Nd ...
3. A silicon step junction has uniform impurity doping concentrations of N. 5 x 1015 cm-3 and Nd = 1 x 1015 cm-, and a cross-sectional area of A-|0-4 cm2. Let tao -0.4 s and tpo 0.1 us. Consider the geometry in Figure.Calculate (a) the ideal reverse saturation current due to holes, (b) the ideal reverse saturation current due to electrons, (c) the hole concentration at a, if V V and (d) the electron current at x = x" +...
Assume a p-n step junction in silicon wi concentration of 2x1016,c? and the n-type material doped...
Assume a p-n step junction in silicon wi concentration of 2x1016,c? and the n-type material doped at 3X10-s,cm3 The intrinsic carrier density is 1.25X101°/cm and all dopants are fully ionized Assume that the effective density of states for silicon is 3.3x10 cm3 for the conduction band and 1.75x101 cm for the valence band. Assume that the temperature is 300K and silicon relative permittivity of 11.7 a. Compute the hole concentration on the n-side and electron concentration th the p-type material...
Find the electron and hole concentrations and Fermi level in silicon at 300 K (a) for...
Find the electron and hole concentrations and Fermi level in silicon at 300 K (a) for 1 x 10^15 boron atoms/cm^3 and (b) for 3 x 10^16 boron atoms/cm^3 and 2/9 x 10^16 arsenic atoms/cm^3. The first two are acceptor concentrations, and the third one is an donor concentration.
An n-type silicon with No = 1 x 1015 cm'has hole and electron mobility values of 500 cm/\-sec and 1500 cm²/.sec respectively. The semiconductor is maintained at 300 K. Excess hole concentration varies with distance (x) as p(x) = 1015 exp ( -.) cm3 Calculate hole diffusion current density at x = 0 and x=Lp if the lifetime of holes is 0.01 us.
P4. Find the resistivity at T 300 K for a silicon sample doped with 1 x 10cm of phosphorus (P) atoms, 8.5 x 10 cm of arsenic (As) atoms, and 1.2 x 103 cm3 of boron (B) atoms. Assume that the impurities are completely ionized and the mobilities are μ,-1500 cm2/V-s, μ,-500 cm2/V-s, independent of impurity concentrations. Also assume intrinsic carrier concentration of Si n 1.5 x 10 cm). Hint!!; we can usually use the rule for compensated semiconductors as...
Find the resistivity at 300 K for a silicon sample doped with 1.0 times 10^14 cm^-3 of phosphorous atoms, 8.5 times 10^13 cm^-3 of arsenic atoms, and 1.2 times 10^13 cm^-3 of boron atoms. Assume that the impurities are completely ionized and the mobilities are mu_n = 1500 cm^2/V-s, mu_p = 500 cm^2/V-s, independent of impurity concentrations.
P5. The electron concentration in silicon at T 300°K is given by n (x) = 1016 exp (-x/18)/cm' where x is measured in um and is limited to 0 SxS 25 um (also 18 has a unit of um). The electron diffusion coefficient is D.-25 cm2/sec and the electron mobility is -960 cm2/V-sec. The total electron current density through the semiconductor is constant and equal to J- 40 A/cm2. The electron current has both diffusion and drift current components. Determine...
3. A silicon step junction has uniform impurity doping concentrations of N. 5 x 1015 cm-3 and Nd = 1 x 1015 cm-, and a cross-sectional area of A-|0-4 cm2. Let tao -0.4 s and tpo 0.1 us. Consider the geometry in Figure.Calculate (a) the ideal reverse saturation current due to holes, (b) the ideal reverse saturation current due to electrons, (c) the hole concentration at a, if V V and (d) the electron current at x = x" +...
Assume a p-n step junction in silicon wi concentration of 2x1016,c? and the n-type material doped at 3X10-s,cm3 The intrinsic carrier density is 1.25X101°/cm and all dopants are fully ionized Assume that the effective density of states for silicon is 3.3x10 cm3 for the conduction band and 1.75x101 cm for the valence band. Assume that the temperature is 300K and silicon relative permittivity of 11.7 a. Compute the hole concentration on the n-side and electron concentration th the p-type material...
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