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Find the resistivity at 300 K for a silicon sample doped with 1.0 times 10^14 cm^-3...
P4. Find the resistivity at T 300 K for a silicon sample doped with 1 x 10cm of phosphorus (P) atoms, 8.5 x 10 cm o...
P4. Find the resistivity at T 300 K for a silicon sample doped with 1 x 10cm of phosphorus (P) atoms, 8.5 x 10 cm of arsenic (As) atoms, and 1.2 x 103 cm3 of boron (B) atoms. Assume that the impurities are completely ionized and the mobilities are μ,-1500 cm2/V-s, μ,-500 cm2/V-s, independent of impurity concentrations. Also assume intrinsic carrier concentration of Si n 1.5 x 10 cm). Hint!!; we can usually use the rule for compensated semiconductors as...
If 2.5 times 10^14 boron atoms per cm^3 are added to silicon as a substitutional impurity,...
If 2.5 times 10^14 boron atoms per cm^3 are added to silicon as a substitutional impurity, determine what fraction of the silicon atoms are displaced in the lattice. The lattice constant of Si is 5.43 A. In the previous problem, estimate the average distance between the nearest impurity atoms. (Assume the boron atoms form a simple cubic lattice.)
1252 407 3. At 300 K the electron mobility in n-type silicon in cm?N.s can be...
1252 407 3. At 300 K the electron mobility in n-type silicon in cm?N.s can be approximated as un = 88+ - 0.88*n where N is 1+1.26 X 1017 the total ionized impurity concentration /cm? At 300 K the hole mobility in p-type silicon in cm N.s can be approximated as Hp = 54 + 5.88xN where N is the total ionized impurity concentration /cm3. Use these equations to generate plots of electron and hole mobility in silicon as a...
2. (a) A piece of silicon is doped with 5x107/cm boron atoms. Find the hole and...
2. (a) A piece of silicon is doped with 5x107/cm boron atoms. Find the hole and electron concentrations at room temperature (20°C) and at 150°C. (b) Calculate the resistance of the silicon piece in part (a), if it has length of 10 um and cross-section of 10 um'. Use mobility values from the mobility vs carrier concentration plot from lecture slides. (c) Repeat steps (a) and (b) for the Si doped with 104 cm boron atoms. What you mention for...
Find the electron and hole concentrations and Fermi level in silicon at 300 K (a) for...
Find the electron and hole concentrations and Fermi level in silicon at 300 K (a) for 1 x 10^15 boron atoms/cm^3 and (b) for 3 x 10^16 boron atoms/cm^3 and 2/9 x 10^16 arsenic atoms/cm^3. The first two are acceptor concentrations, and the third one is an donor concentration.
A silicon semiconductor material is doped with 3x1015/cm of phosphorous atoms at room temperature (300°K). Given:...
A silicon semiconductor material is doped with 3x1015/cm of phosphorous atoms at room temperature (300°K). Given: Electron mobility is 1450 cm2/V-s, Hole mobility is 380 cm?/V-s, Intrinsic carrier concentration (n) of Si at room temperature (300°K) 1.5x 101%cm³. Calculate the conductivity of the material
N_As = 6 x10^(+15) atoms/cm^3 N_B = 900 x10^(+12) atoms/cm^3 Do: carriers Find the electron and...
N_As = 6 x10^(+15) atoms/cm^3
N_B = 900 x10^(+12) atoms/cm^3
Do: carriers Find the electron and hole concentrations, n, and P., respectively, (both in :) for the following: (cm) atoms a) For Silicon (Si) doped with Arsenic (As), N = NAS b) For Silicon (Si) doped with Boron (B), N = N, atoms (cm)
A sample of Ge is doped to the extent of 1014 cm-3 donor atoms and 7...
A sample of Ge is doped to the extent of 1014 cm-3 donor atoms and 7 x 10 13 cm-3 acceptor atoms. At the temperature of the sample, the resistivity of intrinsic Ge is 60 ohm-cm. If the applied electric field is 2 V cm-1, find the total conduction current density. Assume electron and hole mobilities of 3800 and 1800 cm2 V-1s-1, respectively.
1. at what voltage the current density in a p-n diode reaches a magnitude of 10 A/cm^2 ? the diode is made by doping with boron are phosphorous with concentrations of 10^18 and 10^19 cm^-3, respec...
1. at what voltage the current density in a p-n diode
reaches a magnitude of 10 A/cm^2 ? the diode is made by doping with
boron are phosphorous with concentrations of 10^18 and 10^19 cm^-3,
respectively.
3. A MOSFET is made on silicon substrate doped with boron with a concentration of 10" cm. Width and length of channel are 100 and O.1 micron respectively. Thickness of the oxide insulator under the gate is 10 nm. Find transconductance of this transistor...
Problem 7 A germanium sample is doped with donors at a level 2 times 10^14/cm^3 and...
Problem 7
A germanium sample is doped with donors at a level 2 times 10^14/cm^3 and no acceptors. Given that n_i = 2.4 times 10^13/cm^3 at 300K: Find the thermal equilibrium electron and hole concentrations at 250K. Repeat part a) for 350K. Speculate on what happens to very low doped materials as temperature increases.
P4. Find the resistivity at T 300 K for a silicon sample doped with 1 x 10cm of phosphorus (P) atoms, 8.5 x 10 cm of arsenic (As) atoms, and 1.2 x 103 cm3 of boron (B) atoms. Assume that the impurities are completely ionized and the mobilities are μ,-1500 cm2/V-s, μ,-500 cm2/V-s, independent of impurity concentrations. Also assume intrinsic carrier concentration of Si n 1.5 x 10 cm). Hint!!; we can usually use the rule for compensated semiconductors as...
If 2.5 times 10^14 boron atoms per cm^3 are added to silicon as a substitutional impurity, determine what fraction of the silicon atoms are displaced in the lattice. The lattice constant of Si is 5.43 A. In the previous problem, estimate the average distance between the nearest impurity atoms. (Assume the boron atoms form a simple cubic lattice.)
1252 407 3. At 300 K the electron mobility in n-type silicon in cm?N.s can be approximated as un = 88+ - 0.88*n where N is 1+1.26 X 1017 the total ionized impurity concentration /cm? At 300 K the hole mobility in p-type silicon in cm N.s can be approximated as Hp = 54 + 5.88xN where N is the total ionized impurity concentration /cm3. Use these equations to generate plots of electron and hole mobility in silicon as a...
2. (a) A piece of silicon is doped with 5x107/cm boron atoms. Find the hole and electron concentrations at room temperature (20°C) and at 150°C. (b) Calculate the resistance of the silicon piece in part (a), if it has length of 10 um and cross-section of 10 um'. Use mobility values from the mobility vs carrier concentration plot from lecture slides. (c) Repeat steps (a) and (b) for the Si doped with 104 cm boron atoms. What you mention for...
N_As = 6 x10^(+15) atoms/cm^3
N_B = 900 x10^(+12) atoms/cm^3
Do: carriers Find the electron and hole concentrations, n, and P., respectively, (both in :) for the following: (cm) atoms a) For Silicon (Si) doped with Arsenic (As), N = NAS b) For Silicon (Si) doped with Boron (B), N = N, atoms (cm)
1. at what voltage the current density in a p-n diode
reaches a magnitude of 10 A/cm^2 ? the diode is made by doping with
boron are phosphorous with concentrations of 10^18 and 10^19 cm^-3,
respectively.
3. A MOSFET is made on silicon substrate doped with boron with a concentration of 10" cm. Width and length of channel are 100 and O.1 micron respectively. Thickness of the oxide insulator under the gate is 10 nm. Find transconductance of this transistor...
Problem 7
A germanium sample is doped with donors at a level 2 times 10^14/cm^3 and no acceptors. Given that n_i = 2.4 times 10^13/cm^3 at 300K: Find the thermal equilibrium electron and hole concentrations at 250K. Repeat part a) for 350K. Speculate on what happens to very low doped materials as temperature increases.
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