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Problem 7
A germanium sample is doped with donors at a level 2 times 10^14/cm^3 and...
A photoconductive cell is made from GaAs doped with donors at a level of 2 ×...
A photoconductive cell is made from GaAs doped with donors at a level of 2 × 1011 cm-3 and operated at 300K. The thickness of the cell is 10−4cm, its width 1.5 cm and length (the dimension parallel to current flow) 0.2 cm. The device is operated under light and dark conditions. a)Calculate the conductivity and resistance of the cell under dark conditions. c)Under light conditions, calculate the electron and hole concentrations required in the cell to produce a cell...
Si sample doped with donors 101°cm-3 initially at room temperature 300 °K (n 31010 cm. Later it i...
Si sample doped with donors 101°cm-3 initially at room temperature 300 °K (n 31010 cm. Later it is excited optically as such 1019 cm-3electron-hole pairs are produced in one second uniformly in the sample. Si band gap energy isEg-1.11 eV and the recombination for hole electron life-time10 μs. Hint may use results of question 1 above. Draw appropriate figures and mark related levels! a) Calculate the equilibrium Fermi level with respect to conduction band edge Ec b) Calculate the equilibrium...
Consider a silicon crystal doped with 10^16 cm-3 Boron. Due to contamination, this crystal also contains...
Consider a silicon crystal doped with 10^16 cm-3 Boron. Due to contamination, this crystal also contains deep level traps with an energy level in the middle of the Si bandgap (In other words, Etrap=Ei) and concentration 10^15 cm-3 . These traps can either act like donors or acceptors. At T=300K, determine if the traps are acting as donors or acceptors. Also determine the position of the Fermi level (EF).
Problem 2 (10 points) For a 1 cm intrinsic Germanium crystal, at liquid nitrogen temperature (77K...
Problem 2 (10 points) For a 1 cm intrinsic Germanium crystal, at liquid nitrogen temperature (77K) the intrinsic carrier concentration is 10/cm3. At this temperature the electron and hole mobilities are the equal, μ.-An-36192 cm 2/Vs. If 100 V is applied across the Ge cube at 77K, what is the current you measure?5 pt a) b) If uah4.9-107-T-166 (cm2V1s1), what is the current at 300K?5 pt
Problem 2 (10 points) For a 1 cm intrinsic Germanium crystal, at liquid nitrogen...
Find the resistivity at 300 K for a silicon sample doped with 1.0 times 10^14 cm^-3...
Find the resistivity at 300 K for a silicon sample doped with 1.0 times 10^14 cm^-3 of phosphorous atoms, 8.5 times 10^13 cm^-3 of arsenic atoms, and 1.2 times 10^13 cm^-3 of boron atoms. Assume that the impurities are completely ionized and the mobilities are mu_n = 1500 cm^2/V-s, mu_p = 500 cm^2/V-s, independent of impurity concentrations.
A sample of Ge is doped to the extent of 1014 cm-3 donor atoms and 7...
A sample of Ge is doped to the extent of 1014 cm-3 donor atoms and 7 x 10 13 cm-3 acceptor atoms. At the temperature of the sample, the resistivity of intrinsic Ge is 60 ohm-cm. If the applied electric field is 2 V cm-1, find the total conduction current density. Assume electron and hole mobilities of 3800 and 1800 cm2 V-1s-1, respectively.
14 Q1. Given a NA = 10 /cm" doped Si sample a) b) c) Calculate Ef...
14 Q1. Given a NA = 10 /cm" doped Si sample a) b) c) Calculate Ef as a function of Temperature T at 500K intervals from 3000K to 5000K. Any conclusion could be drawn from a) part? If the donor has ND-1014/cm3 to replace the NA, what is the Ef at 3000K, 4000K and 5000K The band gap affected by temperature should be included. Q2. At 300K, please find the doping limit of both n-type and p-type Ge to have...
2. (a) A piece of silicon is doped with 5x107/cm boron atoms. Find the hole and...
2. (a) A piece of silicon is doped with 5x107/cm boron atoms. Find the hole and electron concentrations at room temperature (20°C) and at 150°C. (b) Calculate the resistance of the silicon piece in part (a), if it has length of 10 um and cross-section of 10 um'. Use mobility values from the mobility vs carrier concentration plot from lecture slides. (c) Repeat steps (a) and (b) for the Si doped with 104 cm boron atoms. What you mention for...
Problem 7: A silicon diode is asymmetrically doped at ND-10', cm? and N-1016 cm'. (Note that...
Problem 7: A silicon diode is asymmetrically doped at ND-10', cm? and N-1016 cm'. (Note that at N 10" the semiconductor is on the edge of degeneracy, but we can assume that non-degenerate carrier statistics are close enough for this problem.) Answer the following questions assuming room temperature. Assume that the minority electron and hole lifetimes are τ.-, 10's. The lengths of the N and P regions are L = 500 μm and 1. >> x,,x . a) Find the...
A pn junction diode is made of a new semiconductor with 10^16cm-3 donors in the n...
A pn junction diode is made of a new semiconductor with 10^16cm-3 donors in the n side and 2x10^17cm-3 acceptors on the p-side. Intrinsic carrier concentration is same as silicon 10^10cm-3at room temperature. Let's assume that a forward bias voltage is applied in a way that it create following minority carrier concentrations in quasi neutral regions. p(x) =10^4 + 10^14/[1+10^4(x-xn)] (cm-3) where x>xn>0 and n(x) = 500-10^15/[10^4(x+xp)-1] (cm-3) where x<-xp<0. x is given in cm scale. Calculate the total current...
Si sample doped with donors 101°cm-3 initially at room temperature 300 °K (n 31010 cm. Later it is excited optically as such 1019 cm-3electron-hole pairs are produced in one second uniformly in the sample. Si band gap energy isEg-1.11 eV and the recombination for hole electron life-time10 μs. Hint may use results of question 1 above. Draw appropriate figures and mark related levels! a) Calculate the equilibrium Fermi level with respect to conduction band edge Ec b) Calculate the equilibrium...
Problem 2 (10 points) For a 1 cm intrinsic Germanium crystal, at liquid nitrogen temperature (77K) the intrinsic carrier concentration is 10/cm3. At this temperature the electron and hole mobilities are the equal, μ.-An-36192 cm 2/Vs. If 100 V is applied across the Ge cube at 77K, what is the current you measure?5 pt a) b) If uah4.9-107-T-166 (cm2V1s1), what is the current at 300K?5 pt
Problem 2 (10 points) For a 1 cm intrinsic Germanium crystal, at liquid nitrogen...
Find the resistivity at 300 K for a silicon sample doped with 1.0 times 10^14 cm^-3 of phosphorous atoms, 8.5 times 10^13 cm^-3 of arsenic atoms, and 1.2 times 10^13 cm^-3 of boron atoms. Assume that the impurities are completely ionized and the mobilities are mu_n = 1500 cm^2/V-s, mu_p = 500 cm^2/V-s, independent of impurity concentrations.
14 Q1. Given a NA = 10 /cm" doped Si sample a) b) c) Calculate Ef as a function of Temperature T at 500K intervals from 3000K to 5000K. Any conclusion could be drawn from a) part? If the donor has ND-1014/cm3 to replace the NA, what is the Ef at 3000K, 4000K and 5000K The band gap affected by temperature should be included. Q2. At 300K, please find the doping limit of both n-type and p-type Ge to have...
2. (a) A piece of silicon is doped with 5x107/cm boron atoms. Find the hole and electron concentrations at room temperature (20°C) and at 150°C. (b) Calculate the resistance of the silicon piece in part (a), if it has length of 10 um and cross-section of 10 um'. Use mobility values from the mobility vs carrier concentration plot from lecture slides. (c) Repeat steps (a) and (b) for the Si doped with 104 cm boron atoms. What you mention for...
Problem 7: A silicon diode is asymmetrically doped at ND-10', cm? and N-1016 cm'. (Note that at N 10" the semiconductor is on the edge of degeneracy, but we can assume that non-degenerate carrier statistics are close enough for this problem.) Answer the following questions assuming room temperature. Assume that the minority electron and hole lifetimes are τ.-, 10's. The lengths of the N and P regions are L = 500 μm and 1. >> x,,x . a) Find the...
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