A photoconductive cell is made from GaAs doped with donors at a level of 2 ×...
A photoconductive cell is made from GaAs doped with donors at a level of 2 × 1011 cm-3 and operated at 300K. The thickness of the cell is 10−4cm, its width 1.5 cm and length (the dimension parallel to current flow) 0.2 cm. The device is operated under light and dark conditions.
a)Calculate the conductivity and resistance of the cell under dark conditions.
c)Under light conditions, calculate the electron and hole concentrations required in the cell to produce a cell resistance of 200 Ω assuming the electron and hole recombination times are 10−4 s.
e) Calculate the optical generation rate corresponding to part (c).
Solutions: 1a) 4.52 MΩ c) 4.37E15 cm-3 e) 4.37E19 cm-3s-1
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A photoconductive cell is made from GaAs doped with donors at a level of 2 ×...
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Please help me out.. Need to pass this course as a removal for my other course.....
Please help me out.. Need to pass this course as a removal for
my other course..
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A germanium sample is doped with donors at a level 2 times 10^14/cm^3 and no acceptors. Given that n_i = 2.4 times 10^13/cm^3 at 300K: Find the thermal equilibrium electron and hole concentrations at 250K. Repeat part a) for 350K. Speculate on what happens to very low doped materials as temperature increases.
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Please help me out.. Need to pass this course as a removal for
my other course..
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