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An abrupt junction GaAs diode is doped with acceptors on the P-side at a concentration of...

An abrupt junction GaAs diode is doped with acceptors on the P-side at a concentration of 1016 cm−3 , donors on the N-side at a concentration of 1017 cm−3 and operated at 300 K. The hole recombination time on the N-side 0.2 µs and the electron recombination time on the P-side is 2 µs. The cross sectional area is 10-2 cm2

a) Calculate the reverse saturation current.

b) Calculate the contact potential.

e) Calculate the bias voltage needed to obtain a forward current of 2 mA.

f) Under a forward bias with a total current of 2 mA, calculate the electron current across the junction.

Exact Solutions: a) 9.37 zA b) 1.21 V e) 1.03 V f) 1.89 mA

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