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QUESTION 3 What current in microamps do we get with an ideal abrupt junction silicon diode with (100 micron)M2 area and doped with acceptors at 6.9 1015/cc, 1000 times more donor doping, and forward bias of 0.52 V. Assume e- & e+ mobilities of 1500 & 500 cmA2/(V*s), and minority carrier lifetimes of 1 microsecond. Vt-0.02585V, Answer should be to two significant digits with fixed point notation.

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