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QUESTION 4 How many stored carriers are outside depletion region with an ideal abrupt junction silicon diode with (1 micron)A2 area and doped with acceptors and donors at 6.27*10^15/cc, and forward bias of 0.63 V. Assume e-& e+ mobilities of 1500 & 500 cmn2/V*s), and minority carrier lifetimes of 1 microsecond. Vt:0.02585V, Answer should be to two significant digits with fixed point nctation.

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