Consider an abrupt p-n junction formed by two steps; an entire silicon sample was first doped...
Consider an abrupt p-n junction formed by two steps; an entire silicon sample was first doped with 1.0E+15
cm-3 acceptors (step I), and then a half of the sample was doped with 2.0E+15 cm-3 donors at room temperature
(step II).
a. Calculate the Fermi levels on each side of the junction with respect to Ei. Use the Special Conditions to find
the concentrations.
b. Calculate the contact potential.
c. Calculate the ratio , Xpo/Xno
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Consider an abrupt p-n junction formed by two steps; an entire
silicon sample was first doped...
Consider an abrupt p-n junction consisted of a p-side silicon doped with 1.0E+15 cm-3 acceptors and...
Consider an abrupt p-n junction consisted of a p-side silicon doped with 1.0E+15 cm-3 acceptors and an n- side silicon doped with 1.0E+15 cm-3 donors at room temperature (no donors in p-side and no acceptors in n-side). a. Calculate the Fermi levels on each side of the junction with respect to Ei. Use the Special Conditions to find the concentrations. b. Calculate the contact potential. c .Calculate the ratio, Xpo/Xno
An abrupt junction GaAs diode is doped with acceptors on the P-side at a concentration of...
An abrupt junction GaAs diode is doped with acceptors on the P-side at a concentration of 1016 cm−3 , donors on the N-side at a concentration of 1017 cm−3 and operated at 300 K. The hole recombination time on the N-side 0.2 µs and the electron recombination time on the P-side is 2 µs. The cross sectional area is 10-2 cm2 a) Calculate the reverse saturation current. b) Calculate the contact potential. e) Calculate the bias voltage needed to obtain...
Consider a silicon crystal doped with 10^16 cm-3 Boron. Due to contamination, this crystal also contains...
Consider a silicon crystal doped with 10^16 cm-3 Boron. Due to contamination, this crystal also contains deep level traps with an energy level in the middle of the Si bandgap (In other words, Etrap=Ei) and concentration 10^15 cm-3 . These traps can either act like donors or acceptors. At T=300K, determine if the traps are acting as donors or acceptors. Also determine the position of the Fermi level (EF).
B2 Consider a diode formed by making a p-n junction structure in a silicon sample as shown in Fig. B2. nt laver p-type...
B2 Consider a diode formed by making a p-n junction structure in a silicon sample as shown in Fig. B2. nt laver p-type Si Fig. B2 (a). If the dopant concentrations of the n layer and the p-type silicon are 6x101" cm and 8x10 cm respectively, calculate the built-in potential of the p-n junction at room temperature (300 K) 15 (3 marks) (b). Due to overheating of the silicon sample, the diode has an operation temperature of 200 °C and...
2. An abrupt silicon p-n junction is formed from p-type material with a resistivity of 1.3x10-...
2. An abrupt silicon p-n junction is formed from p-type material with a resistivity of 1.3x10- 12m and n-type material with resistivity of 4.6x10- Sam at room temperature. The lifetimes of the p- and n-materials are 100 us and 150 us respectively, and the junction area is 1.0 mm?.if Mp 4.8x102 m²/V.s „Mn = 0.135 m²/V.s and n; = 1.5x1016 carrier /m , calculate the reverse bias leakage current. Then calculate forward bias current if a 0.3 volt is applied.
Assume a p-n step junction in silicon wi concentration of 2x1016,c? and the n-type material doped...
Assume a p-n step junction in silicon wi concentration of 2x1016,c? and the n-type material doped at 3X10-s,cm3 The intrinsic carrier density is 1.25X101°/cm and all dopants are fully ionized Assume that the effective density of states for silicon is 3.3x10 cm3 for the conduction band and 1.75x101 cm for the valence band. Assume that the temperature is 300K and silicon relative permittivity of 11.7 a. Compute the hole concentration on the n-side and electron concentration th the p-type material...
1o points: Conside r an abrupt Si pn junction that has 10 acceptors em3 on the p-side donors on t...
asap. please
1o points: Conside r an abrupt Si pn junction that has 10 acceptors em3 on the p-side donors on the n-side. The minority carier recombination times are fe-490 ns for and 109 electrons in the 1350 cm Vs, and with Nd-10 cm and A,s 65 cm ,The cross-sectional area is 1.5 mm. Assume this is a long diode, please calculate the current, I, hrough the diode at room temperature when the voltage, V, acoss it is 0.25 2.5...
4. AP-N abrupt junction is formed in Silicon as follows: The P-side has a uniform acceptor...
4. AP-N abrupt junction is formed in Silicon as follows: The P-side has a uniform acceptor concentration of 2E18/cm^3 and the N-side has a uniform donor concentration of 2E15/cm^3. (a) Find the built-in voltage, V of the P-N junction at 300K. (b) Find the width of the depletion regions in the P and N regions of the transition region for zero reverse bias and for 5V reverse bias. (c) What is the depletion capacitance per unit area with zero reverse...
1. (25 pts) T=300K. Consider a uniformly doped silicon PN junction with doping concentrations N, =...
1. (25 pts) T=300K. Consider a uniformly doped silicon PN junction with doping concentrations N, = 3x10 cm and Na = 2x10 cm. Calculate Is i LN3x10 cm, Lp = 5x10 cm, and A = 10 cm. If the applied voltage is 0.68 volts, what is the current density?
Si sample doped with donors 101°cm-3 initially at room temperature 300 °K (n 31010 cm. Later it i...
Si sample doped with donors 101°cm-3 initially at room temperature 300 °K (n 31010 cm. Later it is excited optically as such 1019 cm-3electron-hole pairs are produced in one second uniformly in the sample. Si band gap energy isEg-1.11 eV and the recombination for hole electron life-time10 μs. Hint may use results of question 1 above. Draw appropriate figures and mark related levels! a) Calculate the equilibrium Fermi level with respect to conduction band edge Ec b) Calculate the equilibrium...
B2 Consider a diode formed by making a p-n junction structure in a silicon sample as shown in Fig. B2. nt laver p-type Si Fig. B2 (a). If the dopant concentrations of the n layer and the p-type silicon are 6x101" cm and 8x10 cm respectively, calculate the built-in potential of the p-n junction at room temperature (300 K) 15 (3 marks) (b). Due to overheating of the silicon sample, the diode has an operation temperature of 200 °C and...
2. An abrupt silicon p-n junction is formed from p-type material with a resistivity of 1.3x10- 12m and n-type material with resistivity of 4.6x10- Sam at room temperature. The lifetimes of the p- and n-materials are 100 us and 150 us respectively, and the junction area is 1.0 mm?.if Mp 4.8x102 m²/V.s „Mn = 0.135 m²/V.s and n; = 1.5x1016 carrier /m , calculate the reverse bias leakage current. Then calculate forward bias current if a 0.3 volt is applied.
Assume a p-n step junction in silicon wi concentration of 2x1016,c? and the n-type material doped at 3X10-s,cm3 The intrinsic carrier density is 1.25X101°/cm and all dopants are fully ionized Assume that the effective density of states for silicon is 3.3x10 cm3 for the conduction band and 1.75x101 cm for the valence band. Assume that the temperature is 300K and silicon relative permittivity of 11.7 a. Compute the hole concentration on the n-side and electron concentration th the p-type material...
asap. please
1o points: Conside r an abrupt Si pn junction that has 10 acceptors em3 on the p-side donors on the n-side. The minority carier recombination times are fe-490 ns for and 109 electrons in the 1350 cm Vs, and with Nd-10 cm and A,s 65 cm ,The cross-sectional area is 1.5 mm. Assume this is a long diode, please calculate the current, I, hrough the diode at room temperature when the voltage, V, acoss it is 0.25 2.5...
4. AP-N abrupt junction is formed in Silicon as follows: The P-side has a uniform acceptor concentration of 2E18/cm^3 and the N-side has a uniform donor concentration of 2E15/cm^3. (a) Find the built-in voltage, V of the P-N junction at 300K. (b) Find the width of the depletion regions in the P and N regions of the transition region for zero reverse bias and for 5V reverse bias. (c) What is the depletion capacitance per unit area with zero reverse...
1. (25 pts) T=300K. Consider a uniformly doped silicon PN junction with doping concentrations N, = 3x10 cm and Na = 2x10 cm. Calculate Is i LN3x10 cm, Lp = 5x10 cm, and A = 10 cm. If the applied voltage is 0.68 volts, what is the current density?
Si sample doped with donors 101°cm-3 initially at room temperature 300 °K (n 31010 cm. Later it is excited optically as such 1019 cm-3electron-hole pairs are produced in one second uniformly in the sample. Si band gap energy isEg-1.11 eV and the recombination for hole electron life-time10 μs. Hint may use results of question 1 above. Draw appropriate figures and mark related levels! a) Calculate the equilibrium Fermi level with respect to conduction band edge Ec b) Calculate the equilibrium...
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