1. (25 pts) T=300K. Consider a uniformly doped silicon PN junction with doping concentrations N, =...

Question

Question

Answer 1

Similar Homework Help Questions

please answer 7.17, i put 7.10 for reference. Consider a uniformly doped silicon pn junction with...

please answer 7.17, i put 7.10 for reference. Consider a uniformly doped silicon pn junction with doping concentrations N 2 x 7.10 = 1017 cm3and N = 4 X 1016 cm3. (a) Determine Vhi at T = 300 K. (b) Determine the temperature at which Vhi increases by 2 percent. (Trial and error may have to be used.) 7.17 Consider the pn junction described in Problem 7.10 for T = 300 K. The cross- sectional area of the junction is...
3. A silicon step junction has uniform impurity doping concentrations of N. 5 x 1015 cm-3 and Nd ...

3. A silicon step junction has uniform impurity doping concentrations of N. 5 x 1015 cm-3 and Nd = 1 x 1015 cm-, and a cross-sectional area of A-|0-4 cm2. Let tao -0.4 s and tpo 0.1 us. Consider the geometry in Figure.Calculate (a) the ideal reverse saturation current due to holes, (b) the ideal reverse saturation current due to electrons, (c) the hole concentration at a, if V V and (d) the electron current at x = x" +...
36. (15 pts) Calculate Vol in a silicon PN junction at T=300K for Ny=10cm N, -10cm...

36. (15 pts) Calculate Vol in a silicon PN junction at T=300K for Ny=10cm N, -10cm Determine the space charge width for an applied reverse bias voltage of 12V. Calculate the depletion layer capacitance for a cross-sectional area of 10 cm?

A silicon region is doped uniformly with Phosphorous atoms with a doping density of 0.5E 17...

A silicon region is doped uniformly with Phosphorous atoms with a doping density of 0.5E 17 per cm^3. I want to uniformly dope silicon (300K) such that at equilibrium the hole density is 1E+17 per cm^3 (a) What dopant atom will you use to achieve this? (b) What will be the doping density of the dopant atom you use? HIM
Design a silicon pn junction by finding the ratio of the impurity

Design a silicon pn junction by finding the ratio of the impurity n junction by finding the ratio of the impurity concentrations Na e p-n junction to be designed is assumed to have ideal current-voltage (12 pts) N D Design a silic such that 95 percent elect 2. A. cent of the total current in the depletion region is contributed by rons. Th In addition, it has the following parameter values τ,-τ,-0.1 x 10-6 s, D,-10 cm2/s and D,-25 cm2/s...
A silicon region is doped uniformly with Phosphorous atoms with a doping density of OSE 17...

A silicon region is doped uniformly with Phosphorous atoms with a doping density of OSE 17 per cm^3. I want to uniformly dope silicon (300K) such that at equilibrium the hole density is 16-17 per cm3 (a) What dopant atom will you use to achieve this? (b) What will be the doping density of the dopant atom you use!

Consider a silicon pn step junction diode with NA-1x1018 cm3 and No 1x1017cm-3, maintained at T...

Consider a silicon pn step junction diode with NA-1x1018 cm3 and No 1x1017cm-3, maintained at T 300K. The minority carrier lifetimes in the p-side and n-side are τη-10-8 s and Tp-10-7 s, respectively. a) Calculate the minority carrier densities at the edges of the depletion region when the applied voltage (VA) is 0.6 V. of the junction, for the applied bias voltage of part (a) densities are equal in magnitude, for the applied voltage of part (a). b) Sketch the...
THE REVERSE BIAS VOLTAGE APPLIED TO SILICON PN JUNCTION DIODE IS 4V, DOPING CONCENTRATION Na is...

THE REVERSE BIAS VOLTAGE APPLIED TO SILICON PN JUNCTION DIODE IS 4V, DOPING CONCENTRATION Na is 10^17 cm^-3, Nd = 10^16 cm^-3, ni = 1.3 x 10^9 cm^-3, temperature T = 273 k find the width of depletion region with the applied reverse voltage please check your answer that it is correct please it is a humble request
Q3 Consider a GaAs pn junction with doping concentrations Na5 x 106 cm-3 and N1016 cm-3....

Q3 Consider a GaAs pn junction with doping concentrations Na5 x 106 cm-3 and N1016 cm-3. The junction cross-sectional area is A 103 cm2 and the applied forward-bias voltage is Va 1.10 V. Calculate the (a) minority electron diffusion cur rent at the edge of the space charge region, (b) minority hole diffusion current at the edge of the space charge region, and (c) total current in the pn junction diode.

p-side remain unchanged. 3. Consider a long silicon pn junction photodiode at T-300 K with the...

p-side remain unchanged. 3. Consider a long silicon pn junction photodiode at T-300 K with the following parameters :N, 2x1016 cm-3,Nd-2x1 O18 cm's D,-25 crnVs, D,-10 cm?/sMr-2x10 po-10's. Assume a reverse bias voltage of VR-5 V is applied and assume a uniform generation rate of GL-1021 cm's-1 exists throughout the entire photodiode. Calculate the ratio of the prompt photocurrent density to the total steady state photocurrent density