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A silicon region is doped uniformly with Phosphorous atoms with a doping density of OSE 17...
A silicon region is doped uniformly with Phosphorous atoms with a doping density of 0.5E 17...
A silicon region is doped uniformly with Phosphorous atoms with a doping density of 0.5E 17 per cm^3. I want to uniformly dope silicon (300K) such that at equilibrium the hole density is 1E+17 per cm^3 (a) What dopant atom will you use to achieve this? (b) What will be the doping density of the dopant atom you use? HIM
A silicon crystal is doped with Boron atoms with a dopant density of OSE+17 per cm...
A silicon crystal is doped with Boron atoms with a dopant density of OSE+17 per cm 3 An electric feld points from left to right. On an average, the free electrons in the silicon block (a) Move from left to right (b) Move from right to left (d) Do not move
1. (25 pts) T=300K. Consider a uniformly doped silicon PN junction with doping concentrations N, =...
1. (25 pts) T=300K. Consider a uniformly doped silicon PN junction with doping concentrations N, = 3x10 cm and Na = 2x10 cm. Calculate Is i LN3x10 cm, Lp = 5x10 cm, and A = 10 cm. If the applied voltage is 0.68 volts, what is the current density?
A silicon (300 K) block has a Boron dopant density of OSE+17 per cm*3. The thickness...
A silicon (300 K) block has a Boron dopant density of OSE+17 per cm*3. The thickness of the Silicon region is 1 micro-meter (1E-6 m). (a) Calculate the resistivity (Hint: The thickness does not play any role in determining the resistivity) (b) What should the length and width of the silicon region be if I want to build a resistor with this silicon block that has a resistance of 20 kilo-Ohm. (Hint: There is more than one correct answer for...
Problem 2. Silicon is used to dope a crystal of InP to a doping concentration of...
Problem 2. Silicon is used to dope a crystal of InP to a doping concentration of 2.5x10^16/cm3. Assume that all the silicon atoms displace only P atoms in the InP crystal. This is an example of “amphoteric” doping. (a) Explain amphoteric doping, and why it is important I specify which type of atoms in an InP crystal is replaced by the Si atoms that are used for doping. (b) In this situation, state if the doped InP is n-type or...
3. A silicon npn bipolar transistor is uniformly doped and biased in the forward active region wi...
3. A silicon npn bipolar transistor is uniformly doped and biased in the forward active region with the base-collector junction reverse biased by 2.5 V. The metallurgical base width is 1.5 μm. The emitter, base collector doping concentrations are 5 × 1017, 1016, 2 × 1015 cm-3 respectively. a. At T-300 K, calculate the base-emitter voltage at which the minority carrier electron concentration at x-0 is 20% of the majority carrier hole concentration. At this voltage calculate the minority carrier...
A silicon semiconductor material is doped with 3x1015/cm of phosphorous atoms at room temperature (300°K). Given:...
A silicon semiconductor material is doped with 3x1015/cm of phosphorous atoms at room temperature (300°K). Given: Electron mobility is 1450 cm2/V-s, Hole mobility is 380 cm?/V-s, Intrinsic carrier concentration (n) of Si at room temperature (300°K) 1.5x 101%cm³. Calculate the conductivity of the material
3. A silicon step junction has uniform impurity doping concentrations of N. 5 x 1015 cm-3 and Nd ...
3. A silicon step junction has uniform impurity doping concentrations of N. 5 x 1015 cm-3 and Nd = 1 x 1015 cm-, and a cross-sectional area of A-|0-4 cm2. Let tao -0.4 s and tpo 0.1 us. Consider the geometry in Figure.Calculate (a) the ideal reverse saturation current due to holes, (b) the ideal reverse saturation current due to electrons, (c) the hole concentration at a, if V V and (d) the electron current at x = x" +...
2. (a) A piece of silicon is doped with 5x107/cm boron atoms. Find the hole and...
2. (a) A piece of silicon is doped with 5x107/cm boron atoms. Find the hole and electron concentrations at room temperature (20°C) and at 150°C. (b) Calculate the resistance of the silicon piece in part (a), if it has length of 10 um and cross-section of 10 um'. Use mobility values from the mobility vs carrier concentration plot from lecture slides. (c) Repeat steps (a) and (b) for the Si doped with 104 cm boron atoms. What you mention for...
Assume a p-n step junction in silicon wi concentration of 2x1016,c? and the n-type material doped...
Assume a p-n step junction in silicon wi concentration of 2x1016,c? and the n-type material doped at 3X10-s,cm3 The intrinsic carrier density is 1.25X101°/cm and all dopants are fully ionized Assume that the effective density of states for silicon is 3.3x10 cm3 for the conduction band and 1.75x101 cm for the valence band. Assume that the temperature is 300K and silicon relative permittivity of 11.7 a. Compute the hole concentration on the n-side and electron concentration th the p-type material...
A silicon region is doped uniformly with Phosphorous atoms with a doping density of 0.5E 17 per cm^3. I want to uniformly dope silicon (300K) such that at equilibrium the hole density is 1E+17 per cm^3 (a) What dopant atom will you use to achieve this? (b) What will be the doping density of the dopant atom you use? HIM
A silicon crystal is doped with Boron atoms with a dopant density of OSE+17 per cm 3 An electric feld points from left to right. On an average, the free electrons in the silicon block (a) Move from left to right (b) Move from right to left (d) Do not move
1. (25 pts) T=300K. Consider a uniformly doped silicon PN junction with doping concentrations N, = 3x10 cm and Na = 2x10 cm. Calculate Is i LN3x10 cm, Lp = 5x10 cm, and A = 10 cm. If the applied voltage is 0.68 volts, what is the current density?
A silicon (300 K) block has a Boron dopant density of OSE+17 per cm*3. The thickness of the Silicon region is 1 micro-meter (1E-6 m). (a) Calculate the resistivity (Hint: The thickness does not play any role in determining the resistivity) (b) What should the length and width of the silicon region be if I want to build a resistor with this silicon block that has a resistance of 20 kilo-Ohm. (Hint: There is more than one correct answer for...
3. A silicon npn bipolar transistor is uniformly doped and biased in the forward active region with the base-collector junction reverse biased by 2.5 V. The metallurgical base width is 1.5 μm. The emitter, base collector doping concentrations are 5 × 1017, 1016, 2 × 1015 cm-3 respectively. a. At T-300 K, calculate the base-emitter voltage at which the minority carrier electron concentration at x-0 is 20% of the majority carrier hole concentration. At this voltage calculate the minority carrier...
3. A silicon step junction has uniform impurity doping concentrations of N. 5 x 1015 cm-3 and Nd = 1 x 1015 cm-, and a cross-sectional area of A-|0-4 cm2. Let tao -0.4 s and tpo 0.1 us. Consider the geometry in Figure.Calculate (a) the ideal reverse saturation current due to holes, (b) the ideal reverse saturation current due to electrons, (c) the hole concentration at a, if V V and (d) the electron current at x = x" +...
2. (a) A piece of silicon is doped with 5x107/cm boron atoms. Find the hole and electron concentrations at room temperature (20°C) and at 150°C. (b) Calculate the resistance of the silicon piece in part (a), if it has length of 10 um and cross-section of 10 um'. Use mobility values from the mobility vs carrier concentration plot from lecture slides. (c) Repeat steps (a) and (b) for the Si doped with 104 cm boron atoms. What you mention for...
Assume a p-n step junction in silicon wi concentration of 2x1016,c? and the n-type material doped at 3X10-s,cm3 The intrinsic carrier density is 1.25X101°/cm and all dopants are fully ionized Assume that the effective density of states for silicon is 3.3x10 cm3 for the conduction band and 1.75x101 cm for the valence band. Assume that the temperature is 300K and silicon relative permittivity of 11.7 a. Compute the hole concentration on the n-side and electron concentration th the p-type material...
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