Homework Answers
Answer:(b) Move from right to left
Explanation:We know that the net movement of electrons in a semiconductor is opposite to the electric field and net movement holes is in the direction of electric field.
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A silicon crystal is doped with Boron atoms with a dopant density of OSE+17 per cm...
A silicon crystal is doped with Boron atoms. A small electric held points from left to...
A silicon crystal is doped with Boron atoms. A small electric held points from left to right On an average, the Boron ions in the silicon block (a) Move from left to right b) Move from right to left (c) Do not move
A silicon crystal is doped with Boron atoms. A small electric field points from left to...
A silicon crystal is doped with Boron atoms. A small electric field points from left to right On an average, the Boron ions in the silicon block (a) Move from left to right (b) Move from right to left lo Do not move
A silicon region is doped uniformly with Phosphorous atoms with a doping density of OSE 17...
A silicon region is doped uniformly with Phosphorous atoms with a doping density of OSE 17 per cm^3. I want to uniformly dope silicon (300K) such that at equilibrium the hole density is 16-17 per cm3 (a) What dopant atom will you use to achieve this? (b) What will be the doping density of the dopant atom you use!
A silicon (300 K) block has a Boron dopant density of OSE+17 per cm*3. The thickness...
A silicon (300 K) block has a Boron dopant density of OSE+17 per cm*3. The thickness of the Silicon region is 1 micro-meter (1E-6 m). (a) Calculate the resistivity (Hint: The thickness does not play any role in determining the resistivity) (b) What should the length and width of the silicon region be if I want to build a resistor with this silicon block that has a resistance of 20 kilo-Ohm. (Hint: There is more than one correct answer for...
A silicon region is doped uniformly with Phosphorous atoms with a doping density of 0.5E 17...
A silicon region is doped uniformly with Phosphorous atoms with a doping density of 0.5E 17 per cm^3. I want to uniformly dope silicon (300K) such that at equilibrium the hole density is 1E+17 per cm^3 (a) What dopant atom will you use to achieve this? (b) What will be the doping density of the dopant atom you use? HIM
If a silicon diffusion is doped with boron at a concentration of 5.0 x 10^17/cm^3, what...
If a silicon diffusion is doped with boron at a concentration of 5.0 x 10^17/cm^3, what is the concentration of electrons in this piece of silicon per cm^3? Assume ni = 1.5 x 10^10/cm^3 at 300°K Answer:
2. (a) A piece of silicon is doped with 5x107/cm boron atoms. Find the hole and...
2. (a) A piece of silicon is doped with 5x107/cm boron atoms. Find the hole and electron concentrations at room temperature (20°C) and at 150°C. (b) Calculate the resistance of the silicon piece in part (a), if it has length of 10 um and cross-section of 10 um'. Use mobility values from the mobility vs carrier concentration plot from lecture slides. (c) Repeat steps (a) and (b) for the Si doped with 104 cm boron atoms. What you mention for...
Consider a silicon crystal doped with 10^16 cm-3 Boron. Due to contamination, this crystal also contains...
Consider a silicon crystal doped with 10^16 cm-3 Boron. Due to contamination, this crystal also contains deep level traps with an energy level in the middle of the Si bandgap (In other words, Etrap=Ei) and concentration 10^15 cm-3 . These traps can either act like donors or acceptors. At T=300K, determine if the traps are acting as donors or acceptors. Also determine the position of the Fermi level (EF).
If a silicon diffusion is doped with boron at a concentration of 9.6 x 10 17/cmA3,...
If a silicon diffusion is doped with boron at a concentration of 9.6 x 10 17/cmA3, what is the concentration of electrons in this piece of silicon per cmA3? Assume ni 1.5 x 10 10/cmA3 at 300°K Answer
(a) Silicon wafers can be made p-doped by diffusing boron into the wafer. If Boron is...
(a) Silicon wafers can be made p-doped by diffusing boron into the wafer. If Boron is diffused at 1100 °C for 5 hours. Using the diffusion equation below: dx with J is the particle flux (in cm2s1), n is the particle density (in cm-3) and D is the diffusion constant (in cm2.s1). If the concentration of Boron at the surface is 1018 cm-3, calculate the depth below the surface at which the concentration is 1017 cm-3. The Boron diffusion flux...
A silicon crystal is doped with Boron atoms. A small electric held points from left to right On an average, the Boron ions in the silicon block (a) Move from left to right b) Move from right to left (c) Do not move
A silicon crystal is doped with Boron atoms. A small electric field points from left to right On an average, the Boron ions in the silicon block (a) Move from left to right (b) Move from right to left lo Do not move
A silicon region is doped uniformly with Phosphorous atoms with a doping density of OSE 17 per cm^3. I want to uniformly dope silicon (300K) such that at equilibrium the hole density is 16-17 per cm3 (a) What dopant atom will you use to achieve this? (b) What will be the doping density of the dopant atom you use!
A silicon (300 K) block has a Boron dopant density of OSE+17 per cm*3. The thickness of the Silicon region is 1 micro-meter (1E-6 m). (a) Calculate the resistivity (Hint: The thickness does not play any role in determining the resistivity) (b) What should the length and width of the silicon region be if I want to build a resistor with this silicon block that has a resistance of 20 kilo-Ohm. (Hint: There is more than one correct answer for...
A silicon region is doped uniformly with Phosphorous atoms with a doping density of 0.5E 17 per cm^3. I want to uniformly dope silicon (300K) such that at equilibrium the hole density is 1E+17 per cm^3 (a) What dopant atom will you use to achieve this? (b) What will be the doping density of the dopant atom you use? HIM
If a silicon diffusion is doped with boron at a concentration of 5.0 x 10^17/cm^3, what is the concentration of electrons in this piece of silicon per cm^3? Assume ni = 1.5 x 10^10/cm^3 at 300°K Answer:
2. (a) A piece of silicon is doped with 5x107/cm boron atoms. Find the hole and electron concentrations at room temperature (20°C) and at 150°C. (b) Calculate the resistance of the silicon piece in part (a), if it has length of 10 um and cross-section of 10 um'. Use mobility values from the mobility vs carrier concentration plot from lecture slides. (c) Repeat steps (a) and (b) for the Si doped with 104 cm boron atoms. What you mention for...
If a silicon diffusion is doped with boron at a concentration of 9.6 x 10 17/cmA3, what is the concentration of electrons in this piece of silicon per cmA3? Assume ni 1.5 x 10 10/cmA3 at 300°K Answer
(a) Silicon wafers can be made p-doped by diffusing boron into the wafer. If Boron is diffused at 1100 °C for 5 hours. Using the diffusion equation below: dx with J is the particle flux (in cm2s1), n is the particle density (in cm-3) and D is the diffusion constant (in cm2.s1). If the concentration of Boron at the surface is 1018 cm-3, calculate the depth below the surface at which the concentration is 1017 cm-3. The Boron diffusion flux...
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