If a silicon diffusion is doped with boron at a concentration of 9.6 x 10 17/cmA3,...
If a silicon diffusion is doped with boron at a concentration of 5.0 x 10^17/cm^3, what is the concentration of electrons in this piece of silicon per cm^3? Assume ni = 1.5 x 10^10/cm^3 at 300°K Answer:
(a) Silicon wafers can be made p-doped by diffusing boron into the wafer. If Boron is diffused at 1100 °C for 5 hours. Using the diffusion equation below: dx with J is the particle flux (in cm2s1), n is the particle density (in cm-3) and D is the diffusion constant (in cm2.s1). If the concentration of Boron at the surface is 1018 cm-3, calculate the depth below the surface at which the concentration is 1017 cm-3. The Boron diffusion flux...
2. (a) A piece of silicon is doped with 5x107/cm boron atoms. Find the hole and electron concentrations at room temperature (20°C) and at 150°C. (b) Calculate the resistance of the silicon piece in part (a), if it has length of 10 um and cross-section of 10 um'. Use mobility values from the mobility vs carrier concentration plot from lecture slides. (c) Repeat steps (a) and (b) for the Si doped with 104 cm boron atoms. What you mention for...
A silicon crystal is doped with Boron atoms with a dopant density of OSE+17 per cm 3 An electric feld points from left to right. On an average, the free electrons in the silicon block (a) Move from left to right (b) Move from right to left (d) Do not move
P4. Find the resistivity at T 300 K for a silicon sample doped with 1 x 10cm of phosphorus (P) atoms, 8.5 x 10 cm of arsenic (As) atoms, and 1.2 x 103 cm3 of boron (B) atoms. Assume that the impurities are completely ionized and the mobilities are μ,-1500 cm2/V-s, μ,-500 cm2/V-s, independent of impurity concentrations. Also assume intrinsic carrier concentration of Si n 1.5 x 10 cm). Hint!!; we can usually use the rule for compensated semiconductors as...
1. MOSFET is made on silicon substrate doped with boron to a concentration of 5x1027 cm. Silicon oxide layer of thickness 5 nm is used as an insulator. Gate electrode is made of n-type polysilicon doped to a concentration of 8x1018 cm Width and length of the transistor are 10 micrometer and 100 nm respectively. For this transistor find: a) saturation drain voltage at gate voltage 7 V; b) transconductance at gate voltage 6 V. 160 mev 140
Q1 (20%): The total electron concentration in a piece of lightly doped, n-type silicon at 500 varies linearly from 1X107 cm3 at x 0 to 6 x 10 cm at x 2 um. Electrons are supplied by an external circuit to keep this concentration constant with time. Calculate the electron current density in the silicon if no electric field is present at x 0. Assume H 1000 cm2/V-s. X-2um Q1 (20%): The total electron concentration in a piece of lightly...
Please answer question with the formulas given 3. A MOSFET is made on silicon substrate doped with boron with a concentration of 10 cm2. Width and length of channel are 100 and 0.1 micron respectively. Thickness of the oxide insulator under the gate is 10 nm. Find transconductance of this transistor and saturation current at gate voltage 6 V kT, (Nc In Na 2 KTN 3. A MOSFET is made on silicon substrate doped with boron with a concentration of...
If a block of Si is doped with 10^17 Boron atom/cm^3 and 5X10^16 Arsenic atoms/cm^3, (a) Calculate the electron (n) and hole (p) concentration at 300°K. (b) Calculate the Fermi level (Ef- Ev) at 300°K. Sketch the band diagram and Fermi level. (c) Estimate the conductivity σ of the sample in part (a).