If a block of Si is doped with 10^17 Boron atom/cm^3 and 5X10^16 Arsenic atoms/cm^3, (a)...
If a block of Si is doped with 10^17 Boron atom/cm^3 and 5X10^16 Arsenic atoms/cm^3,
(a) Calculate the electron (n) and hole (p) concentration at 300°K.
(b) Calculate the Fermi level (Ef- Ev) at 300°K. Sketch the band diagram and Fermi level.
(c) Estimate the conductivity σ of the sample in part (a).
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If a block of Si is doped with 10^17 Boron atom/cm^3 and 5X10^16
Arsenic atoms/cm^3,
(a)...
Si sample doped with donors 101°cm-3 initially at room temperature 300 °K (n 31010 cm. Later it i...
Si sample doped with donors 101°cm-3 initially at room temperature 300 °K (n 31010 cm. Later it is excited optically as such 1019 cm-3electron-hole pairs are produced in one second uniformly in the sample. Si band gap energy isEg-1.11 eV and the recombination for hole electron life-time10 μs. Hint may use results of question 1 above. Draw appropriate figures and mark related levels! a) Calculate the equilibrium Fermi level with respect to conduction band edge Ec b) Calculate the equilibrium...
2. (a) A piece of silicon is doped with 5x107/cm boron atoms. Find the hole and...
2. (a) A piece of silicon is doped with 5x107/cm boron atoms. Find the hole and electron concentrations at room temperature (20°C) and at 150°C. (b) Calculate the resistance of the silicon piece in part (a), if it has length of 10 um and cross-section of 10 um'. Use mobility values from the mobility vs carrier concentration plot from lecture slides. (c) Repeat steps (a) and (b) for the Si doped with 104 cm boron atoms. What you mention for...
Calculate the conductivity, in (12-cm) 1, of extrinsic Si doped with 2.02 x 1017 atoms/cm of...
Calculate the conductivity, in (12-cm) 1, of extrinsic Si doped with 2.02 x 1017 atoms/cm of arsenic. The electron and hole mobilities are 1350 and 450 cm2 V-s respectively. (answer format X.X)
Silicon at at T-300 K contains acceptor atoms at a concentration of Na-5x10A15 cmA-3. Donor atoms are added forming an n type compensated(counter doped) semiconductor such that the fermi level is 0.2...
Silicon at at T-300 K contains acceptor atoms at a concentration of Na-5x10A15 cmA-3. Donor atoms are added forming an n type compensated(counter doped) semiconductor such that the fermi level is 0.215 eV below the conduction band edge 4. a. What concentration of donor atoms were added. b. What were the concentration of holes and electrons before the silicon was counterdoped c. What are the electron and hole concentrations after the silicon was counter doped.
Silicon at at T-300 K...
Silicon at at T-300 K contains acceptor atoms at a concentration of Na-5x10A15 cmA-3. Donor atoms are added forming an n type compensated(counter doped) semiconductor such that the fermi level is 0.2...
Silicon at at T-300 K contains acceptor atoms at a concentration of Na-5x10A15 cmA-3. Donor atoms are added forming an n type compensated(counter doped) semiconductor such that the fermi level is 0.215 eV below the conduction band edge 4. a. What concentration of donor atoms were added. b. What were the concentration of holes and electrons before the silicon was counterdoped c. What are the electron and hole concentrations after the silicon was counter doped.
Silicon at at T-300 K...
In a semiconductor it can be shown that the product of the electron and hole densities...
In a semiconductor it can be shown that the product of the electron and hole densities is the square of the intrinsic density, i.e., pm n. Find the equilibrium electron (n) and hole (p) concentrations and the location of the Fermi level (EF) referenced to the conduction band (Ec) or valence band (Ev) in Si at 27°C if the Si contains the following concentrations of shallow dopant atoms: a) 1x1016 cm-3 boron atoms b) 3x1016 cm-3 arsenic atoms and 2.9x1016...
P3. (a) Determine the position of the Fermi level with respect to the intrinsic Fermi level in silicon at T =...
P3. (a) Determine the position of the Fermi level with respect to the intrinsic Fermi level in silicon at T = 300'K that is doped with phosphors atoms at a concentration of 1015 cm. (b) Repeat (a) if the silicon is doped with boron atoms at a concentration of 10'5 cm3. (c) Calculate the electron concentration in the silicon for parts (a) and (b) P1. For the Boltzmann approximation to be valid for a semiconductor, the Fermi level must be...
Consider a silicon crystal doped with 10^16 cm-3 Boron. Due to contamination, this crystal also contains...
Consider a silicon crystal doped with 10^16 cm-3 Boron. Due to contamination, this crystal also contains deep level traps with an energy level in the middle of the Si bandgap (In other words, Etrap=Ei) and concentration 10^15 cm-3 . These traps can either act like donors or acceptors. At T=300K, determine if the traps are acting as donors or acceptors. Also determine the position of the Fermi level (EF).
A silicon semiconductor material is doped with 3x1015/cm of phosphorous atoms at room temperature (300°K). Given:...
A silicon semiconductor material is doped with 3x1015/cm of phosphorous atoms at room temperature (300°K). Given: Electron mobility is 1450 cm2/V-s, Hole mobility is 380 cm?/V-s, Intrinsic carrier concentration (n) of Si at room temperature (300°K) 1.5x 101%cm³. Calculate the conductivity of the material
6. A silicon wafer is doped with donor atoms, N-5x0 cm(bonus question) (a) Determine (Ec-EF), (EF...
6. A silicon wafer is doped with donor atoms, N-5x0 cm(bonus question) (a) Determine (Ec-EF), (EF-Ev), (Ep-E) at 300 K. Assume all the donor atoms are ionized. (b) Plot the position of Fermi level (EF) in the bandgap as a function of temperature for 300 Ts700 K. In this temperature range, it can be assumed that all the donor atoms are ionized. (c) Plot the position of Fermi level (Er) in the bandgap as acceptor atoms are added (N.- 104,...
Si sample doped with donors 101°cm-3 initially at room temperature 300 °K (n 31010 cm. Later it is excited optically as such 1019 cm-3electron-hole pairs are produced in one second uniformly in the sample. Si band gap energy isEg-1.11 eV and the recombination for hole electron life-time10 μs. Hint may use results of question 1 above. Draw appropriate figures and mark related levels! a) Calculate the equilibrium Fermi level with respect to conduction band edge Ec b) Calculate the equilibrium...
2. (a) A piece of silicon is doped with 5x107/cm boron atoms. Find the hole and electron concentrations at room temperature (20°C) and at 150°C. (b) Calculate the resistance of the silicon piece in part (a), if it has length of 10 um and cross-section of 10 um'. Use mobility values from the mobility vs carrier concentration plot from lecture slides. (c) Repeat steps (a) and (b) for the Si doped with 104 cm boron atoms. What you mention for...
Calculate the conductivity, in (12-cm) 1, of extrinsic Si doped with 2.02 x 1017 atoms/cm of arsenic. The electron and hole mobilities are 1350 and 450 cm2 V-s respectively. (answer format X.X)
Silicon at at T-300 K contains acceptor atoms at a concentration of Na-5x10A15 cmA-3. Donor atoms are added forming an n type compensated(counter doped) semiconductor such that the fermi level is 0.215 eV below the conduction band edge 4. a. What concentration of donor atoms were added. b. What were the concentration of holes and electrons before the silicon was counterdoped c. What are the electron and hole concentrations after the silicon was counter doped.
Silicon at at T-300 K...
Silicon at at T-300 K contains acceptor atoms at a concentration of Na-5x10A15 cmA-3. Donor atoms are added forming an n type compensated(counter doped) semiconductor such that the fermi level is 0.215 eV below the conduction band edge 4. a. What concentration of donor atoms were added. b. What were the concentration of holes and electrons before the silicon was counterdoped c. What are the electron and hole concentrations after the silicon was counter doped.
Silicon at at T-300 K...
In a semiconductor it can be shown that the product of the electron and hole densities is the square of the intrinsic density, i.e., pm n. Find the equilibrium electron (n) and hole (p) concentrations and the location of the Fermi level (EF) referenced to the conduction band (Ec) or valence band (Ev) in Si at 27°C if the Si contains the following concentrations of shallow dopant atoms: a) 1x1016 cm-3 boron atoms b) 3x1016 cm-3 arsenic atoms and 2.9x1016...
P3. (a) Determine the position of the Fermi level with respect to the intrinsic Fermi level in silicon at T = 300'K that is doped with phosphors atoms at a concentration of 1015 cm. (b) Repeat (a) if the silicon is doped with boron atoms at a concentration of 10'5 cm3. (c) Calculate the electron concentration in the silicon for parts (a) and (b) P1. For the Boltzmann approximation to be valid for a semiconductor, the Fermi level must be...
6. A silicon wafer is doped with donor atoms, N-5x0 cm(bonus question) (a) Determine (Ec-EF), (EF-Ev), (Ep-E) at 300 K. Assume all the donor atoms are ionized. (b) Plot the position of Fermi level (EF) in the bandgap as a function of temperature for 300 Ts700 K. In this temperature range, it can be assumed that all the donor atoms are ionized. (c) Plot the position of Fermi level (Er) in the bandgap as acceptor atoms are added (N.- 104,...
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