P1. For the Boltzmann approximation to be valid for a semiconductor, the Fermi level must be at least 3kT below the donor level (assume Ec) in an n-type material and at least 3kT above the acceptor level (assume Ev) in a p-type material. If T = 3002, determine the maximum electron concentration in an n-type semiconductor and the maximum hole concentration in a p-type semiconductor for the Boltzmann approximation to be valid in Silicon material
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P3. (a) Determine the position of the Fermi level with respect to the intrinsic Fermi level in silicon at T =...
P3. (a) Determine the position of the Fermi level with respect to the intrinsic Fermi level in silicon at T = 300&#...
P3. (a) Determine the position of the Fermi level with respect to the intrinsic Fermi level in silicon at T = 300'K that is doped with phosphors atoms at a concentration of 1015 cm. (b) Repeat (a) if the silicon is doped with boron atoms at a concentration of 10'5 cm3. (c) Calculate the electron concentration in the silicon for parts (a) and (b)
P3. (a) Determine the position of the Fermi level with respect to the intrinsic Fermi level...
Silicon at at T-300 K contains acceptor atoms at a concentration of Na-5x10A15 cmA-3. Donor atoms are added forming an n type compensated(counter doped) semiconductor such that the fermi level is 0.2...
Silicon at at T-300 K contains acceptor atoms at a concentration of Na-5x10A15 cmA-3. Donor atoms are added forming an n type compensated(counter doped) semiconductor such that the fermi level is 0.215 eV below the conduction band edge 4. a. What concentration of donor atoms were added. b. What were the concentration of holes and electrons before the silicon was counterdoped c. What are the electron and hole concentrations after the silicon was counter doped.
Silicon at at T-300 K...
Silicon at at T-300 K contains acceptor atoms at a concentration of Na-5x10A15 cmA-3. Donor atoms are added forming an n type compensated(counter doped) semiconductor such that the fermi level is 0.2...
Silicon at at T-300 K contains acceptor atoms at a concentration of Na-5x10A15 cmA-3. Donor atoms are added forming an n type compensated(counter doped) semiconductor such that the fermi level is 0.215 eV below the conduction band edge 4. a. What concentration of donor atoms were added. b. What were the concentration of holes and electrons before the silicon was counterdoped c. What are the electron and hole concentrations after the silicon was counter doped.
Silicon at at T-300 K...
7. Find the position of the intrinsic Fermi level with respect to Emidgap for silicon, germanium,...
7. Find the position of the intrinsic Fermi level with respect to Emidgap for silicon, germanium, gallium arsenide, and indium arsenide. Use the effective density of states values from problem 5. 8. a. Draw a band diagram for silicon doped 107/cmp-type and label the band gap and the position of the Fermi level. b. Draw a band diagram for gallium arsenide doped 10/cmn-type and label the band gap and the position of the Fermi level. c. Draw a band diagram...
6. A silicon wafer is doped with donor atoms, N-5x0 cm(bonus question) (a) Determine (Ec-EF), (EF...
6. A silicon wafer is doped with donor atoms, N-5x0 cm(bonus question) (a) Determine (Ec-EF), (EF-Ev), (Ep-E) at 300 K. Assume all the donor atoms are ionized. (b) Plot the position of Fermi level (EF) in the bandgap as a function of temperature for 300 Ts700 K. In this temperature range, it can be assumed that all the donor atoms are ionized. (c) Plot the position of Fermi level (Er) in the bandgap as acceptor atoms are added (N.- 104,...
(a) Assuming that the Fermi level is at the midgap in the intrinsic silicon, calculate the...
(a) Assuming that the Fermi level is at the midgap in the intrinsic silicon, calculate the probability of finding an electron at the bottom of the conduction band (E=Ec) for three different temperatures: 0K, 20C, 100C? (b) How are these probabilities related to the probabilities of finding a hole at E=Ev, which is the top of the valence band? (c) A sample of silicon is doped with 1016 cm-3 of arsenic and 3x1016 cm-3 of boron. Calculate n, p, and...
A semiconductor sample is doped p-type with 1017 boron atoms/cm3 (assume p=Na). Where is the Fermi...
A semiconductor sample is doped p-type with 1017 boron atoms/cm3 (assume p=Na). Where is the Fermi level of the p-type material, ???, relative to the intrinsic Fermi level, ???? (for this sample at 300K, the intrinsic electron concentration ?? = 2 × 1013 ??−3 ).
Find the electron and hole concentrations and Fermi level in silicon at 300 K (a) for...
Find the electron and hole concentrations and Fermi level in silicon at 300 K (a) for 1 x 10^15 boron atoms/cm^3 and (b) for 3 x 10^16 boron atoms/cm^3 and 2/9 x 10^16 arsenic atoms/cm^3. The first two are acceptor concentrations, and the third one is an donor concentration.
The electron concentration and hole concentration in intrinsic silicon are equal. Explain why the fermi level...
The electron concentration and hole concentration in intrinsic silicon are equal. Explain why the fermi level is not 'exactly' at the middle of the bandgap.
3. Silicon samples with band-gas 1.1 eV at 300 Kelvin, are doped at four different levels...
3. Silicon samples with band-gas 1.1 eV at 300 Kelvin, are doped at four different levels and have the properties listed below. Case 1: Case 2: Case 3: Case 4: Ex-Ey = 0.15 eV Ef-Ey=0.88 eV EF-Ey = 0.55 eV Ex-Ey = 1.09 eV The four cases above show the position of the Fermi Level Er relative to the valence band edge Ev.at dilterent doping levels. a) identify each sample as degenerate and nondegenerate. b) which nondegenerate case shows heavy...
P3. (a) Determine the position of the Fermi level with respect to the intrinsic Fermi level in silicon at T = 300'K that is doped with phosphors atoms at a concentration of 1015 cm. (b) Repeat (a) if the silicon is doped with boron atoms at a concentration of 10'5 cm3. (c) Calculate the electron concentration in the silicon for parts (a) and (b)
P3. (a) Determine the position of the Fermi level with respect to the intrinsic Fermi level...
Silicon at at T-300 K contains acceptor atoms at a concentration of Na-5x10A15 cmA-3. Donor atoms are added forming an n type compensated(counter doped) semiconductor such that the fermi level is 0.215 eV below the conduction band edge 4. a. What concentration of donor atoms were added. b. What were the concentration of holes and electrons before the silicon was counterdoped c. What are the electron and hole concentrations after the silicon was counter doped.
Silicon at at T-300 K...
Silicon at at T-300 K contains acceptor atoms at a concentration of Na-5x10A15 cmA-3. Donor atoms are added forming an n type compensated(counter doped) semiconductor such that the fermi level is 0.215 eV below the conduction band edge 4. a. What concentration of donor atoms were added. b. What were the concentration of holes and electrons before the silicon was counterdoped c. What are the electron and hole concentrations after the silicon was counter doped.
Silicon at at T-300 K...
7. Find the position of the intrinsic Fermi level with respect to Emidgap for silicon, germanium, gallium arsenide, and indium arsenide. Use the effective density of states values from problem 5. 8. a. Draw a band diagram for silicon doped 107/cmp-type and label the band gap and the position of the Fermi level. b. Draw a band diagram for gallium arsenide doped 10/cmn-type and label the band gap and the position of the Fermi level. c. Draw a band diagram...
6. A silicon wafer is doped with donor atoms, N-5x0 cm(bonus question) (a) Determine (Ec-EF), (EF-Ev), (Ep-E) at 300 K. Assume all the donor atoms are ionized. (b) Plot the position of Fermi level (EF) in the bandgap as a function of temperature for 300 Ts700 K. In this temperature range, it can be assumed that all the donor atoms are ionized. (c) Plot the position of Fermi level (Er) in the bandgap as acceptor atoms are added (N.- 104,...
3. Silicon samples with band-gas 1.1 eV at 300 Kelvin, are doped at four different levels and have the properties listed below. Case 1: Case 2: Case 3: Case 4: Ex-Ey = 0.15 eV Ef-Ey=0.88 eV EF-Ey = 0.55 eV Ex-Ey = 1.09 eV The four cases above show the position of the Fermi Level Er relative to the valence band edge Ev.at dilterent doping levels. a) identify each sample as degenerate and nondegenerate. b) which nondegenerate case shows heavy...
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