Silicon at at T-300 K contains acceptor atoms at a concentration of Na-5x10A15 cmA-3. Donor atoms are added forming an n type compensated(counter doped) semiconductor such that the fermi level is 0.2...

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Silicon at at T-300 K contains acceptor atoms at a concentration of Na-5x10A15 cmA-3. Donor atoms are added forming an n type

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5지 crn- after doping shift in Fesmi level- is Given as 13 adde dono Artom b) Before st wos ounter doped Concent sation of 、2

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