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As I mentioned in the class assume that we have a GaAs (Gallium Arsenide) sample which was doped with excessive As to produce a resistivity of 0.05 Ωm. Owing to the presence of an unknown acceptor impurity the actual resistivity was 0.06Ωm, the sample remaining n-type. What were the concentrations of donors and acceptors present?

(Please take μe=0.85 m2/Vs and assume that all impurity atoms are ionized)

PHYSICAL CONSTANTS Avagadro's Number NA- 6.02 x 10*23 atoms per gram mol. weight k- 1.38 x 1023 J/K k- 8.62 x 105 eV/K Boltzmann's Constant e= 1.60 x 10-19 C m.-9.11 x 1031 kg Ho- 4Tx 10-7 H/m &# 8.85 x 10-14 F/cm h- 6.625 x 1034 J-s h- 4.135 x 1015eV-s h/2tt-h-1.054 x 10-34 J-s M-1.67 x 102" kg c 2.998 x1010 cm/s V kT/e- 0.0259 V Electric Charge Free Electron Mass Permeability of Free Space Permittivity of Free Space Planck's Constant Proton Mass Speed of Light in Vacuum Thermal Voltage (T-300K) PROPERTIES OF SILICON, GALLIUM ARSENIDE, and GERMANIUM at T-300K GaAs 4.42 x 1022 144.63 Zincblende 5.32 5.65 1238 Property Si 5.0 x 1022 28.09 Diamond 2.33 Atoms (cm 3) Atomic Weight Crystal Structure Density (g/cm 3) Lattice Constant (Å) Melting Point (°C) Dielectric Constant Bandgap Energy (ev) Electron Affinity, X (Volts) Density of State in Cond. Band, Nc (cm 3) Density of S. in Valance Band, Nv (cm 3) Intrinsic Carrier Concentration (cm-3) Mobility (cm2/V-s) Electron, un Hole, Hp 4.42 x 1022 72.60 Diamond 5.33 5.65 937 16.0 0.66 4.13 1.04 x 1019 6.0 x 101* 2.4 x1013 3900 1900 1.64,0.082 0.044,0.28 1415 1.12 4.01 2.8 x 1019 1.04 x1019 1.5 x 1010 1350 480 1.42 4.07 4.7 x1017 7.0 x 1018 1.8 x 106 8500 400 0.067,0 0.082,0.45 Effective Mass (mn/mo) Electrons Holes =0.98, mt-0.19 mh -0.16, mhh-0.49 Effective Mass (Density of States) Electrons (mn*/mo) Holes (mp*/mo) 1.08 0.56 0.067 0.48 0.55 0.37

Answer 1

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