Si sample doped with donors 101°cm-3 initially at room temperature 300 °K (n 31010 cm. Later it i...
Would someone help me with A and B please 2) A voltage of 2 V is applied across the length of a 1 cm long Si bar doped with 1014 cm-3 of As with a cross sectional area of 0.02 cm2 and a temperature of 300 K. The bar is optically excited with a pulsed laser such that 102cm electron-hole pairs are generated per second uniformly in the sample when the laser is on. The electron recombination time is 2...
A silicon semiconductor material is doped with 3x1015/cm of phosphorous atoms at room temperature (300°K). Given: Electron mobility is 1450 cm2/V-s, Hole mobility is 380 cm?/V-s, Intrinsic carrier concentration (n) of Si at room temperature (300°K) 1.5x 101%cm³. Calculate the conductivity of the material
A Si sample is doped with NA = 5 x 1015cm 3 and optical excited uniformly with gop-1019EHP/cm3,s. As suming T-300K and using carrier lifetime τη-tp-5us and diffusion coefficient D,-35cm2/s and D,- 12.5cm2Is) (a). Find the steady state electron and hole concentrations (n and p) and the separation of their quasi-Fermi levels (Fn Fp). (b). Calculate the of conductivity, σ, of the Si upon illuminating the light
Problem 7 A germanium sample is doped with donors at a level 2 times 10^14/cm^3 and no acceptors. Given that n_i = 2.4 times 10^13/cm^3 at 300K: Find the thermal equilibrium electron and hole concentrations at 250K. Repeat part a) for 350K. Speculate on what happens to very low doped materials as temperature increases.
Q3. (a) Two semiconductors are brought together to form a junction. Show 5 Marksj] mathematically that the equilibrium Fermi level remains constant throughout the material. (b)An n-type Si sample at room temperature with N, -1015 Icm' is [n5 Marks) steadily illuminated such that g, -1019 EHP/cm2-s. Electron and hole lifetimes are both 10 us for this excitation. Calculated the separation of the Fermi level from the intrinsic level (Er-E) i. i Calculate the separation in the quasi-Fermi levels (F,-F) ii...
Determine the equilibrium electron and hole concentration inside a uniformly doped sample of Si under the following conditions: 4. (a) T 300 K, NA ND, N 1016/cm3 (b) T = 450 K, N,-0, ND-1014/cm 3 (You can use the necessary data from Fig. 2.20 for your calculation.)
draw all levels as well as the values of the energies 4. A Si sample is doped with 1016 As atoms/cm. What is the equilibrium hole concentration po at 300 K? Show the location of Er relative to Ei,. Ec, Ev in a band diagram at the same Ei, Ec, Ev in a band diagram at the same temperature (draw all the levels as well as the values of the energies).
3. A long Si sample, n-doped 5x106cm, with a cross-sectional area of 0.49 cm² is optically excited by a laser (the laser light is absorbed near the surface) such that 1020 per cm electron-hole pairs are generated per second at x-Oum. These excess charge carriers diffuse to the right. What is the total diffusion current at x = 40 um? Electron and hole lifetimes are both 7 us, Mp=500cm?/V-s; D.= 36cm/s.
Biased Sip-n junction A Si p-n junction with area of 0.001 cm* is formed with an acceptor concentration of Na 1x1015 cm3 on the p-side and a donor concentration of Na- 1x10" cmon the n-side. Calculate at 300 K (a) the diffusion voltage VD (b) the space charge width at equilibrium and with zero bias (c) the current with forward bias of 0.5 eV. Assume that the current is diffusion dominated. The electron and hole mobilities are ln-1500 cm2/(Vs) and...
P4. Find the resistivity at T 300 K for a silicon sample doped with 1 x 10cm of phosphorus (P) atoms, 8.5 x 10 cm of arsenic (As) atoms, and 1.2 x 103 cm3 of boron (B) atoms. Assume that the impurities are completely ionized and the mobilities are μ,-1500 cm2/V-s, μ,-500 cm2/V-s, independent of impurity concentrations. Also assume intrinsic carrier concentration of Si n 1.5 x 10 cm). Hint!!; we can usually use the rule for compensated semiconductors as...