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3. A long Si sample, n-doped 5x106cm, with a cross-sectional area of 0.49 cm² is optically...
6. A long p-type Si bar, NA-5x1016 cm3, is optically excited and creates a low level of steady st...
6. A long p-type Si bar, NA-5x1016 cm3, is optically excited and creates a low level of steady state excess carriers at on the left side of the bar (x-o) creating a quasi-Fermi level separation of (E-Fp)-0.42 eV. The carriers diffuse to the right and decay exponentially. Electron and hole lifetimes are both 5 μs Also, it is room temperature, D,-18 cm2/s, Dn-36 cm3/s, and n#1.5x1010 /cm? what is the electron . concentration and current density (A/cm2) at x 50...
Si sample doped with donors 101°cm-3 initially at room temperature 300 °K (n 31010 cm. Later it i...
Si sample doped with donors 101°cm-3 initially at room temperature 300 °K (n 31010 cm. Later it is excited optically as such 1019 cm-3electron-hole pairs are produced in one second uniformly in the sample. Si band gap energy isEg-1.11 eV and the recombination for hole electron life-time10 μs. Hint may use results of question 1 above. Draw appropriate figures and mark related levels! a) Calculate the equilibrium Fermi level with respect to conduction band edge Ec b) Calculate the equilibrium...
A Si sample is doped with NA = 5 x 1015cm 3 and optical excited uniformly...
A Si sample is doped with NA = 5 x 1015cm 3 and optical excited uniformly with gop-1019EHP/cm3,s. As suming T-300K and using carrier lifetime τη-tp-5us and diffusion coefficient D,-35cm2/s and D,- 12.5cm2Is) (a). Find the steady state electron and hole concentrations (n and p) and the separation of their quasi-Fermi levels (Fn Fp). (b). Calculate the of conductivity, σ, of the Si upon illuminating the light
A3. (a) Draw a band diagram and a cross-sectional diagram of an abrupt p-n junction0Marks] with N...
a3. (a) Draw a band diagram and a cross-sectional diagram of an abrupt p-n junction0Marks] with N>N at thermal equilibrium at 300K and label the following: () Diffusion currents, (i) Drift currents (ii) Fermi level, (iv) SCR, (v) QNR, (vi) Contact potential with polarity, (vi) Electric field distribution in the SCR, (vii) Electrostatic potential distribution in SCR, (ix) SCR charges, and (x) SCR penetration into the p-and n sides. (b) In a p'-n junction at 300K, the n side has...
3. A silicon step junction has uniform impurity doping concentrations of N. 5 x 1015 cm-3 and Nd ...
3. A silicon step junction has uniform impurity doping concentrations of N. 5 x 1015 cm-3 and Nd = 1 x 1015 cm-, and a cross-sectional area of A-|0-4 cm2. Let tao -0.4 s and tpo 0.1 us. Consider the geometry in Figure.Calculate (a) the ideal reverse saturation current due to holes, (b) the ideal reverse saturation current due to electrons, (c) the hole concentration at a, if V V and (d) the electron current at x = x" +...
3 A silicon sample of length L. is unifomly doped with NA10 em acceptors. We shine laser light on one end of this sampl...
3 A silicon sample of length L. is unifomly doped with NA10 em acceptors. We shine laser light on one end of this sample that produces Ap An op,. 10 cm electron hole pairs (EHP) only at that cdge. A contact at the other end-.-L extracts all excess carriers, i.e.,6p,兀·L-C. X)-&2(x) assuming L >> diffusion 2S Find excess carrier concentration as a function of r, length L. Recall that Ln,p = Dnpr,,p 8. Find the diffusion current density Jc for...
Would someone help me with A and B please 2) A voltage of 2 V is...
Would someone help me with A and B please
2) A voltage of 2 V is applied across the length of a 1 cm long Si bar doped with 1014 cm-3 of As with a cross sectional area of 0.02 cm2 and a temperature of 300 K. The bar is optically excited with a pulsed laser such that 102cm electron-hole pairs are generated per second uniformly in the sample when the laser is on. The electron recombination time is 2...
t=tau In a very long p-type Si bar with cross-sectional area = 0.1 cm2 and Na-1017...
t=tau
In a very long p-type Si bar with cross-sectional area = 0.1 cm2 and Na-1017 cm", we inject holes such that the steady excess hole concentration is 5 x 1016 cm3 at x 0. ed (a) What is the hole current? (b) How much is the excess stored hole charge? Assume μ,-500 cm2/V s and t,-10-10 s, L,- /Dptp
Problem 7: A silicon diode is asymmetrically doped at ND-10', cm? and N-1016 cm'. (Note that...
Problem 7: A silicon diode is asymmetrically doped at ND-10', cm? and N-1016 cm'. (Note that at N 10" the semiconductor is on the edge of degeneracy, but we can assume that non-degenerate carrier statistics are close enough for this problem.) Answer the following questions assuming room temperature. Assume that the minority electron and hole lifetimes are τ.-, 10's. The lengths of the N and P regions are L = 500 μm and 1. >> x,,x . a) Find the...
6. A long p-type Si bar, NA-5x1016 cm3, is optically excited and creates a low level of steady state excess carriers at on the left side of the bar (x-o) creating a quasi-Fermi level separation of (E-Fp)-0.42 eV. The carriers diffuse to the right and decay exponentially. Electron and hole lifetimes are both 5 μs Also, it is room temperature, D,-18 cm2/s, Dn-36 cm3/s, and n#1.5x1010 /cm? what is the electron . concentration and current density (A/cm2) at x 50...
Si sample doped with donors 101°cm-3 initially at room temperature 300 °K (n 31010 cm. Later it is excited optically as such 1019 cm-3electron-hole pairs are produced in one second uniformly in the sample. Si band gap energy isEg-1.11 eV and the recombination for hole electron life-time10 μs. Hint may use results of question 1 above. Draw appropriate figures and mark related levels! a) Calculate the equilibrium Fermi level with respect to conduction band edge Ec b) Calculate the equilibrium...
A Si sample is doped with NA = 5 x 1015cm 3 and optical excited uniformly with gop-1019EHP/cm3,s. As suming T-300K and using carrier lifetime τη-tp-5us and diffusion coefficient D,-35cm2/s and D,- 12.5cm2Is) (a). Find the steady state electron and hole concentrations (n and p) and the separation of their quasi-Fermi levels (Fn Fp). (b). Calculate the of conductivity, σ, of the Si upon illuminating the light
a3. (a) Draw a band diagram and a cross-sectional diagram of an abrupt p-n junction0Marks] with N>N at thermal equilibrium at 300K and label the following: () Diffusion currents, (i) Drift currents (ii) Fermi level, (iv) SCR, (v) QNR, (vi) Contact potential with polarity, (vi) Electric field distribution in the SCR, (vii) Electrostatic potential distribution in SCR, (ix) SCR charges, and (x) SCR penetration into the p-and n sides. (b) In a p'-n junction at 300K, the n side has...
3. A silicon step junction has uniform impurity doping concentrations of N. 5 x 1015 cm-3 and Nd = 1 x 1015 cm-, and a cross-sectional area of A-|0-4 cm2. Let tao -0.4 s and tpo 0.1 us. Consider the geometry in Figure.Calculate (a) the ideal reverse saturation current due to holes, (b) the ideal reverse saturation current due to electrons, (c) the hole concentration at a, if V V and (d) the electron current at x = x" +...
3 A silicon sample of length L. is unifomly doped with NA10 em acceptors. We shine laser light on one end of this sample that produces Ap An op,. 10 cm electron hole pairs (EHP) only at that cdge. A contact at the other end-.-L extracts all excess carriers, i.e.,6p,兀·L-C. X)-&2(x) assuming L >> diffusion 2S Find excess carrier concentration as a function of r, length L. Recall that Ln,p = Dnpr,,p 8. Find the diffusion current density Jc for...
Would someone help me with A and B please
2) A voltage of 2 V is applied across the length of a 1 cm long Si bar doped with 1014 cm-3 of As with a cross sectional area of 0.02 cm2 and a temperature of 300 K. The bar is optically excited with a pulsed laser such that 102cm electron-hole pairs are generated per second uniformly in the sample when the laser is on. The electron recombination time is 2...
t=tau
In a very long p-type Si bar with cross-sectional area = 0.1 cm2 and Na-1017 cm", we inject holes such that the steady excess hole concentration is 5 x 1016 cm3 at x 0. ed (a) What is the hole current? (b) How much is the excess stored hole charge? Assume μ,-500 cm2/V s and t,-10-10 s, L,- /Dptp
Problem 7: A silicon diode is asymmetrically doped at ND-10', cm? and N-1016 cm'. (Note that at N 10" the semiconductor is on the edge of degeneracy, but we can assume that non-degenerate carrier statistics are close enough for this problem.) Answer the following questions assuming room temperature. Assume that the minority electron and hole lifetimes are τ.-, 10's. The lengths of the N and P regions are L = 500 μm and 1. >> x,,x . a) Find the...
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