3 A silicon sample of length L. is unifomly doped with NA10 em acceptors. We shine laser light on one end of this sampl...
Consider a bar of p-type silicon that is uniformly doped to a value of N, 2 x 10 cm at T- 300 K. The applied electric field is zero. A light source is incident on the end of the semiconductor as shown in Figure P6.19. The steady-state concentration of excess carriers generated at-O is op(0) on(0) 2 x 10 cm-. Assume the following Light p type pa .-1200 cm 2 /V-s, μ,-400 cm2 /V-s. To = 10-6 s, and T.-SX...
Assume that a uniform p-type region of silicon with length L-10 μm, μη-1400 cm2/V-s, and lifetime t 1 us at T 300 K is uniformly illuminated by photon flux G 1019/cm2s. Assume that that all carriers are extracted at x-L (such that Δη-0), while An-1014 /cm3 at x 0. Assume that Po An everwhere. Now consider the system after reaching a steady state. 2. Write down the simplest form of the minority carrier diffusion equation that accurately describes its behavior....