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Consider a bar of p-type silicon that is uniformly doped to a value of N, 2...
3. A silicon step junction has uniform impurity doping concentrations of N. 5 x 1015 cm-3 and Nd ...
3. A silicon step junction has uniform impurity doping concentrations of N. 5 x 1015 cm-3 and Nd = 1 x 1015 cm-, and a cross-sectional area of A-|0-4 cm2. Let tao -0.4 s and tpo 0.1 us. Consider the geometry in Figure.Calculate (a) the ideal reverse saturation current due to holes, (b) the ideal reverse saturation current due to electrons, (c) the hole concentration at a, if V V and (d) the electron current at x = x" +...
Excess electrons as minority carriers are extracted from a bar of p-type silicon having the dimensions...
Excess electrons as minority carriers are extracted from a bar
of p-type silicon having the dimensions shown in Figure 211a. The
bar is uniformly doped with an acceptor concentration Na of 10^17
cm^-e. The excess electron concentration has a profile described
by
211a. Excess electrons as minority carriers are extracted from a bar of p-type silicon having the dimensions shown in Figure 211a. The bar is uniformly doped with an acceptor concentration Na of 10 cm3. The excess electron concentration...
3 A silicon sample of length L. is unifomly doped with NA10 em acceptors. We shine laser light on one end of this sampl...
3 A silicon sample of length L. is unifomly doped with NA10 em acceptors. We shine laser light on one end of this sample that produces Ap An op,. 10 cm electron hole pairs (EHP) only at that cdge. A contact at the other end-.-L extracts all excess carriers, i.e.,6p,兀·L-C. X)-&2(x) assuming L >> diffusion 2S Find excess carrier concentration as a function of r, length L. Recall that Ln,p = Dnpr,,p 8. Find the diffusion current density Jc for...
A silicon semiconductor material is doped with 3x1015/cm of phosphorous atoms at room temperature (300°K). Given:...
A silicon semiconductor material is doped with 3x1015/cm of phosphorous atoms at room temperature (300°K). Given: Electron mobility is 1450 cm2/V-s, Hole mobility is 380 cm?/V-s, Intrinsic carrier concentration (n) of Si at room temperature (300°K) 1.5x 101%cm³. Calculate the conductivity of the material
Q1 (20%): The total electron concentration in a piece of lightly doped, n-type silicon at 500...
Q1 (20%): The total electron concentration in a piece of lightly doped, n-type silicon at 500 varies linearly from 1X107 cm3 at x 0 to 6 x 10 cm at x 2 um. Electrons are supplied by an external circuit to keep this concentration constant with time. Calculate the electron current density in the silicon if no electric field is present at x 0. Assume H 1000 cm2/V-s. X-2um
Q1 (20%): The total electron concentration in a piece of lightly...
An n-type silicon with No = 1 x 1015 cm'has hole and electron mobility values of...
An n-type silicon with No = 1 x 1015 cm'has hole and electron mobility values of 500 cm/\-sec and 1500 cm²/.sec respectively. The semiconductor is maintained at 300 K. Excess hole concentration varies with distance (x) as p(x) = 1015 exp ( -.) cm3 Calculate hole diffusion current density at x = 0 and x=Lp if the lifetime of holes is 0.01 us.
6. A long p-type Si bar, NA-5x1016 cm3, is optically excited and creates a low level of steady st...
6. A long p-type Si bar, NA-5x1016 cm3, is optically excited and creates a low level of steady state excess carriers at on the left side of the bar (x-o) creating a quasi-Fermi level separation of (E-Fp)-0.42 eV. The carriers diffuse to the right and decay exponentially. Electron and hole lifetimes are both 5 μs Also, it is room temperature, D,-18 cm2/s, Dn-36 cm3/s, and n#1.5x1010 /cm? what is the electron . concentration and current density (A/cm2) at x 50...
2. A GaAs semiconductor at T 300 K is uniformly doped with NA 1016 cm3 and...
2. A GaAs semiconductor at T 300 K is uniformly doped with NA 1016 cm3 and No 0. The GaAs is illuminated with a light source at t = 0 s, resulting in a uniform generation rate of electron hole pairs g' 1020 cm . The electric field is zero. a) Give the analytic expression for the excess-carrier concentration δn(t) versus the time t>0s b) The steady state excess carrier concentration is found to be on( is the minority carrier...
3. A long Si sample, n-doped 5x106cm, with a cross-sectional area of 0.49 cm² is optically...
3. A long Si sample, n-doped 5x106cm, with a cross-sectional area of 0.49 cm² is optically excited by a laser (the laser light is absorbed near the surface) such that 1020 per cm electron-hole pairs are generated per second at x-Oum. These excess charge carriers diffuse to the right. What is the total diffusion current at x = 40 um? Electron and hole lifetimes are both 7 us, Mp=500cm?/V-s; D.= 36cm/s.
Problem 4 (25 points) Consider a silicon pn junction at T 300 K, NA ND-1x1016 cm3....
Problem 4 (25 points) Consider a silicon pn junction at T 300 K, NA ND-1x1016 cm3. The minority carrier lifetimes are τ -0.01 μs and τΡ 0.01 μ. The Junction is forwardbiased with , V,-0.6V. The minority carrier diffusion coefficients are D,-20 cm2/s, D,-10 cm2/s. n, = 1.5x 1010cm -3 Depletion region n-type p-type a) (10 points) Calculate the excess electron concentration as a function of x in the p side (see the figure above). b) (5 points) Calculate the...
3. A silicon step junction has uniform impurity doping concentrations of N. 5 x 1015 cm-3 and Nd = 1 x 1015 cm-, and a cross-sectional area of A-|0-4 cm2. Let tao -0.4 s and tpo 0.1 us. Consider the geometry in Figure.Calculate (a) the ideal reverse saturation current due to holes, (b) the ideal reverse saturation current due to electrons, (c) the hole concentration at a, if V V and (d) the electron current at x = x" +...
Excess electrons as minority carriers are extracted from a bar
of p-type silicon having the dimensions shown in Figure 211a. The
bar is uniformly doped with an acceptor concentration Na of 10^17
cm^-e. The excess electron concentration has a profile described
by
211a. Excess electrons as minority carriers are extracted from a bar of p-type silicon having the dimensions shown in Figure 211a. The bar is uniformly doped with an acceptor concentration Na of 10 cm3. The excess electron concentration...
3 A silicon sample of length L. is unifomly doped with NA10 em acceptors. We shine laser light on one end of this sample that produces Ap An op,. 10 cm electron hole pairs (EHP) only at that cdge. A contact at the other end-.-L extracts all excess carriers, i.e.,6p,兀·L-C. X)-&2(x) assuming L >> diffusion 2S Find excess carrier concentration as a function of r, length L. Recall that Ln,p = Dnpr,,p 8. Find the diffusion current density Jc for...
Q1 (20%): The total electron concentration in a piece of lightly doped, n-type silicon at 500 varies linearly from 1X107 cm3 at x 0 to 6 x 10 cm at x 2 um. Electrons are supplied by an external circuit to keep this concentration constant with time. Calculate the electron current density in the silicon if no electric field is present at x 0. Assume H 1000 cm2/V-s. X-2um
Q1 (20%): The total electron concentration in a piece of lightly...
An n-type silicon with No = 1 x 1015 cm'has hole and electron mobility values of 500 cm/\-sec and 1500 cm²/.sec respectively. The semiconductor is maintained at 300 K. Excess hole concentration varies with distance (x) as p(x) = 1015 exp ( -.) cm3 Calculate hole diffusion current density at x = 0 and x=Lp if the lifetime of holes is 0.01 us.
6. A long p-type Si bar, NA-5x1016 cm3, is optically excited and creates a low level of steady state excess carriers at on the left side of the bar (x-o) creating a quasi-Fermi level separation of (E-Fp)-0.42 eV. The carriers diffuse to the right and decay exponentially. Electron and hole lifetimes are both 5 μs Also, it is room temperature, D,-18 cm2/s, Dn-36 cm3/s, and n#1.5x1010 /cm? what is the electron . concentration and current density (A/cm2) at x 50...
2. A GaAs semiconductor at T 300 K is uniformly doped with NA 1016 cm3 and No 0. The GaAs is illuminated with a light source at t = 0 s, resulting in a uniform generation rate of electron hole pairs g' 1020 cm . The electric field is zero. a) Give the analytic expression for the excess-carrier concentration δn(t) versus the time t>0s b) The steady state excess carrier concentration is found to be on( is the minority carrier...
3. A long Si sample, n-doped 5x106cm, with a cross-sectional area of 0.49 cm² is optically excited by a laser (the laser light is absorbed near the surface) such that 1020 per cm electron-hole pairs are generated per second at x-Oum. These excess charge carriers diffuse to the right. What is the total diffusion current at x = 40 um? Electron and hole lifetimes are both 7 us, Mp=500cm?/V-s; D.= 36cm/s.
Problem 4 (25 points) Consider a silicon pn junction at T 300 K, NA ND-1x1016 cm3. The minority carrier lifetimes are τ -0.01 μs and τΡ 0.01 μ. The Junction is forwardbiased with , V,-0.6V. The minority carrier diffusion coefficients are D,-20 cm2/s, D,-10 cm2/s. n, = 1.5x 1010cm -3 Depletion region n-type p-type a) (10 points) Calculate the excess electron concentration as a function of x in the p side (see the figure above). b) (5 points) Calculate the...
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