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Q1 (20%): The total electron concentration in a piece of lightly doped, n-type silicon at 500...
An electron is moving in a piece of lightly doped silicon under an applied electric field...
An electron is moving in a piece of lightly doped silicon under an applied electric field at 270C so that its drift velocity is one-tenth of its thermal velocity. Calculate the average number of collisions it will experience in traversing by drift a region 1 um wide. What is the voltage applied across this region? The mobility for electrons in Si is μ,-1500 cm3/V-sec and the effective mass is m 0.26m0.
2. (a) A piece of silicon is doped with 5x107/cm boron atoms. Find the hole and...
2. (a) A piece of silicon is doped with 5x107/cm boron atoms. Find the hole and electron concentrations at room temperature (20°C) and at 150°C. (b) Calculate the resistance of the silicon piece in part (a), if it has length of 10 um and cross-section of 10 um'. Use mobility values from the mobility vs carrier concentration plot from lecture slides. (c) Repeat steps (a) and (b) for the Si doped with 104 cm boron atoms. What you mention for...
Assume a p-n step junction in silicon wi concentration of 2x1016,c? and the n-type material doped...
Assume a p-n step junction in silicon wi concentration of 2x1016,c? and the n-type material doped at 3X10-s,cm3 The intrinsic carrier density is 1.25X101°/cm and all dopants are fully ionized Assume that the effective density of states for silicon is 3.3x10 cm3 for the conduction band and 1.75x101 cm for the valence band. Assume that the temperature is 300K and silicon relative permittivity of 11.7 a. Compute the hole concentration on the n-side and electron concentration th the p-type material...
P5. The electron concentration in silicon at T 300°K is given by n (x) = 1016 exp (-x/18)/cm' where x is measur...
P5. The electron concentration in silicon at T 300°K is given by n (x) = 1016 exp (-x/18)/cm' where x is measured in um and is limited to 0 SxS 25 um (also 18 has a unit of um). The electron diffusion coefficient is D.-25 cm2/sec and the electron mobility is -960 cm2/V-sec. The total electron current density through the semiconductor is constant and equal to J- 40 A/cm2. The electron current has both diffusion and drift current components. Determine...
Consider an n-type semiconductor at 300 K. The electron concentration increases linearly from 5 x 1015/cm3...
Consider an n-type semiconductor at 300 K. The electron concentration increases linearly from 5 x 1015/cm3 at x = 0 to 1016 /cm3 at x-50 μm. The electron mobility is 1000 cm2/V-s. The diffusion current density at x = 10 μm is Please choose one: a) O8.1 A/cm2 b) 12.2 A/cm2 c)2.2 A/cm2 d) 6.2 A/cm2 04.1 A/cm2
Excess electrons as minority carriers are extracted from a bar of p-type silicon having the dimensions...
Excess electrons as minority carriers are extracted from a bar
of p-type silicon having the dimensions shown in Figure 211a. The
bar is uniformly doped with an acceptor concentration Na of 10^17
cm^-e. The excess electron concentration has a profile described
by
211a. Excess electrons as minority carriers are extracted from a bar of p-type silicon having the dimensions shown in Figure 211a. The bar is uniformly doped with an acceptor concentration Na of 10 cm3. The excess electron concentration...
2. The hole concentration in a sample of p-type silicon varies linearly from 10 cm at...
2. The hole concentration in a sample of p-type silicon varies linearly from 10 cm at x = 0 to 6x10 cm at x =2um. Calculate the hole current density in the sample. Assume room temperature, no applied E-field, and up = 800 cm/(Vs). Include appropriate units with your numerical answer, and show you work.
An n-type silicon with No = 1 x 1015 cm'has hole and electron mobility values of...
An n-type silicon with No = 1 x 1015 cm'has hole and electron mobility values of 500 cm/\-sec and 1500 cm²/.sec respectively. The semiconductor is maintained at 300 K. Excess hole concentration varies with distance (x) as p(x) = 1015 exp ( -.) cm3 Calculate hole diffusion current density at x = 0 and x=Lp if the lifetime of holes is 0.01 us.
3. A silicon step junction has uniform impurity doping concentrations of N. 5 x 1015 cm-3 and Nd ...
3. A silicon step junction has uniform impurity doping concentrations of N. 5 x 1015 cm-3 and Nd = 1 x 1015 cm-, and a cross-sectional area of A-|0-4 cm2. Let tao -0.4 s and tpo 0.1 us. Consider the geometry in Figure.Calculate (a) the ideal reverse saturation current due to holes, (b) the ideal reverse saturation current due to electrons, (c) the hole concentration at a, if V V and (d) the electron current at x = x" +...
An electron is moving in a piece of lightly doped silicon under an applied electric field at 270C so that its drift velocity is one-tenth of its thermal velocity. Calculate the average number of collisions it will experience in traversing by drift a region 1 um wide. What is the voltage applied across this region? The mobility for electrons in Si is μ,-1500 cm3/V-sec and the effective mass is m 0.26m0.
2. (a) A piece of silicon is doped with 5x107/cm boron atoms. Find the hole and electron concentrations at room temperature (20°C) and at 150°C. (b) Calculate the resistance of the silicon piece in part (a), if it has length of 10 um and cross-section of 10 um'. Use mobility values from the mobility vs carrier concentration plot from lecture slides. (c) Repeat steps (a) and (b) for the Si doped with 104 cm boron atoms. What you mention for...
Assume a p-n step junction in silicon wi concentration of 2x1016,c? and the n-type material doped at 3X10-s,cm3 The intrinsic carrier density is 1.25X101°/cm and all dopants are fully ionized Assume that the effective density of states for silicon is 3.3x10 cm3 for the conduction band and 1.75x101 cm for the valence band. Assume that the temperature is 300K and silicon relative permittivity of 11.7 a. Compute the hole concentration on the n-side and electron concentration th the p-type material...
P5. The electron concentration in silicon at T 300°K is given by n (x) = 1016 exp (-x/18)/cm' where x is measured in um and is limited to 0 SxS 25 um (also 18 has a unit of um). The electron diffusion coefficient is D.-25 cm2/sec and the electron mobility is -960 cm2/V-sec. The total electron current density through the semiconductor is constant and equal to J- 40 A/cm2. The electron current has both diffusion and drift current components. Determine...
Consider an n-type semiconductor at 300 K. The electron concentration increases linearly from 5 x 1015/cm3 at x = 0 to 1016 /cm3 at x-50 μm. The electron mobility is 1000 cm2/V-s. The diffusion current density at x = 10 μm is Please choose one: a) O8.1 A/cm2 b) 12.2 A/cm2 c)2.2 A/cm2 d) 6.2 A/cm2 04.1 A/cm2
Excess electrons as minority carriers are extracted from a bar
of p-type silicon having the dimensions shown in Figure 211a. The
bar is uniformly doped with an acceptor concentration Na of 10^17
cm^-e. The excess electron concentration has a profile described
by
211a. Excess electrons as minority carriers are extracted from a bar of p-type silicon having the dimensions shown in Figure 211a. The bar is uniformly doped with an acceptor concentration Na of 10 cm3. The excess electron concentration...
2. The hole concentration in a sample of p-type silicon varies linearly from 10 cm at x = 0 to 6x10 cm at x =2um. Calculate the hole current density in the sample. Assume room temperature, no applied E-field, and up = 800 cm/(Vs). Include appropriate units with your numerical answer, and show you work.
An n-type silicon with No = 1 x 1015 cm'has hole and electron mobility values of 500 cm/\-sec and 1500 cm²/.sec respectively. The semiconductor is maintained at 300 K. Excess hole concentration varies with distance (x) as p(x) = 1015 exp ( -.) cm3 Calculate hole diffusion current density at x = 0 and x=Lp if the lifetime of holes is 0.01 us.
3. A silicon step junction has uniform impurity doping concentrations of N. 5 x 1015 cm-3 and Nd = 1 x 1015 cm-, and a cross-sectional area of A-|0-4 cm2. Let tao -0.4 s and tpo 0.1 us. Consider the geometry in Figure.Calculate (a) the ideal reverse saturation current due to holes, (b) the ideal reverse saturation current due to electrons, (c) the hole concentration at a, if V V and (d) the electron current at x = x" +...
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