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An n-type silicon with No = 1 x 1015 cm'has hole and electron mobility values of...
1252 407 3. At 300 K the electron mobility in n-type silicon in cm?N.s can be...
1252 407 3. At 300 K the electron mobility in n-type silicon in cm?N.s can be approximated as un = 88+ - 0.88*n where N is 1+1.26 X 1017 the total ionized impurity concentration /cm? At 300 K the hole mobility in p-type silicon in cm N.s can be approximated as Hp = 54 + 5.88xN where N is the total ionized impurity concentration /cm3. Use these equations to generate plots of electron and hole mobility in silicon as a...
3. A silicon step junction has uniform impurity doping concentrations of N. 5 x 1015 cm-3 and Nd ...
3. A silicon step junction has uniform impurity doping concentrations of N. 5 x 1015 cm-3 and Nd = 1 x 1015 cm-, and a cross-sectional area of A-|0-4 cm2. Let tao -0.4 s and tpo 0.1 us. Consider the geometry in Figure.Calculate (a) the ideal reverse saturation current due to holes, (b) the ideal reverse saturation current due to electrons, (c) the hole concentration at a, if V V and (d) the electron current at x = x" +...
P5. The electron concentration in silicon at T 300°K is given by n (x) = 1016 exp (-x/18)/cm' where x is measur...
P5. The electron concentration in silicon at T 300°K is given by n (x) = 1016 exp (-x/18)/cm' where x is measured in um and is limited to 0 SxS 25 um (also 18 has a unit of um). The electron diffusion coefficient is D.-25 cm2/sec and the electron mobility is -960 cm2/V-sec. The total electron current density through the semiconductor is constant and equal to J- 40 A/cm2. The electron current has both diffusion and drift current components. Determine...
Consider an n-type semiconductor at 300 K. The electron concentration increases linearly from 5 x 1015/cm3...
Consider an n-type semiconductor at 300 K. The electron concentration increases linearly from 5 x 1015/cm3 at x = 0 to 1016 /cm3 at x-50 μm. The electron mobility is 1000 cm2/V-s. The diffusion current density at x = 10 μm is Please choose one: a) O8.1 A/cm2 b) 12.2 A/cm2 c)2.2 A/cm2 d) 6.2 A/cm2 04.1 A/cm2
The mobility values of electrons and holes in a silicon sample are 1500 cm2/Vs and 500...
The mobility values of electrons and holes in a silicon sample are 1500 cm2/Vs and 500 cm2/Vs, respectively. Calculate the resistivity of the intrinsic semiconductor. The semiconductor is then doped by phosphorus to concentration of 1×1017 cm-3. Calculate the resistivity of the extrinsic semiconductor. Explain why the conductivity is improved in the latter case. Is this a p-type or n-type semiconductor? The intrinsic carrier concentration in silicon is 1.45×1010 cm-3. (10)
Problem 4 (25 points) Consider a silicon pn junction at T-300 K, NA-ND- 1x101° cm3. The minority ...
Problem 4 (25 points) Consider a silicon pn junction at T-300 K, NA-ND- 1x101° cm3. The minority carrier lifetimes are τ n-0.01 μs and τ p-0.01 us. The junction is forwardbiased with Va 0.6V. The minority carrier diffusion coefficients are Dn-20 cm s, Dp 10 cm Is. n.-1.5x 1010 cm-3 Depletion region n-type p-type a) (10 points) Calculate the excess electron concentration as a function of x in the p side (see the figure above). b) (5 points) Calculate the...
Problem 4 (25 points) Consider a silicon pn junction at T-300 K, NA-ND- 1x101° cm3. The minority ...
Can someone help solve this question step by step? Thanks!
Problem 4 (25 points) Consider a silicon pn junction at T-300 K, NA-ND- 1x101° cm3. The minority carrier lifetimes are τ n-0.01 μs and τ p-0.01 us. The junction is forwardbiased with Va 0.6V. The minority carrier diffusion coefficients are Dn-20 cm s, Dp 10 cm Is. n.-1.5x 1010 cm-3 Depletion region n-type p-type a) (10 points) Calculate the excess electron concentration as a function of x in the p...
P3. For an ideal abrupt silicon (Si) P*N diode with doping concentrations Na = 1 x...
P3. For an ideal abrupt silicon (Si) P*N diode with doping concentrations Na = 1 x 107 cm3 and N 1 x 105 cm. (a) Find the stored minority carriers density in the N-side neutral region (infinitely long comparing with Lp and Ln) when a forward bias of 1 V is applied. (b) Calculate the hole current density in the region of (a) at x, 0. (Assume the average diffusion length of hole is 5 um the average carrier life...
P3. For an ideal abrupt silicon (Si) P*N diode with doping concentrations Na = 1 x...
P3. For an ideal abrupt silicon (Si) P*N diode with doping concentrations Na = 1 x 107 cm3 and N 1 x 105 cm. (a) Find the stored minority carriers density in the N-side neutral region (infinitely long comparing with Lp and Ln) when a forward bias of 1 V is applied. (b) Calculate the hole current density in the region of (a) at x, 0. (Assume the average diffusion length of hole is 5 um the average carrier life...
Consider a bar of p-type silicon that is uniformly doped to a value of N, 2...
Consider a bar of p-type silicon that is uniformly doped to a value of N, 2 x 10 cm at T- 300 K. The applied electric field is zero. A light source is incident on the end of the semiconductor as shown in Figure P6.19. The steady-state concentration of excess carriers generated at-O is op(0) on(0) 2 x 10 cm-. Assume the following Light p type pa .-1200 cm 2 /V-s, μ,-400 cm2 /V-s. To = 10-6 s, and T.-SX...
1252 407 3. At 300 K the electron mobility in n-type silicon in cm?N.s can be approximated as un = 88+ - 0.88*n where N is 1+1.26 X 1017 the total ionized impurity concentration /cm? At 300 K the hole mobility in p-type silicon in cm N.s can be approximated as Hp = 54 + 5.88xN where N is the total ionized impurity concentration /cm3. Use these equations to generate plots of electron and hole mobility in silicon as a...
3. A silicon step junction has uniform impurity doping concentrations of N. 5 x 1015 cm-3 and Nd = 1 x 1015 cm-, and a cross-sectional area of A-|0-4 cm2. Let tao -0.4 s and tpo 0.1 us. Consider the geometry in Figure.Calculate (a) the ideal reverse saturation current due to holes, (b) the ideal reverse saturation current due to electrons, (c) the hole concentration at a, if V V and (d) the electron current at x = x" +...
P5. The electron concentration in silicon at T 300°K is given by n (x) = 1016 exp (-x/18)/cm' where x is measured in um and is limited to 0 SxS 25 um (also 18 has a unit of um). The electron diffusion coefficient is D.-25 cm2/sec and the electron mobility is -960 cm2/V-sec. The total electron current density through the semiconductor is constant and equal to J- 40 A/cm2. The electron current has both diffusion and drift current components. Determine...
Consider an n-type semiconductor at 300 K. The electron concentration increases linearly from 5 x 1015/cm3 at x = 0 to 1016 /cm3 at x-50 μm. The electron mobility is 1000 cm2/V-s. The diffusion current density at x = 10 μm is Please choose one: a) O8.1 A/cm2 b) 12.2 A/cm2 c)2.2 A/cm2 d) 6.2 A/cm2 04.1 A/cm2
Problem 4 (25 points) Consider a silicon pn junction at T-300 K, NA-ND- 1x101° cm3. The minority carrier lifetimes are τ n-0.01 μs and τ p-0.01 us. The junction is forwardbiased with Va 0.6V. The minority carrier diffusion coefficients are Dn-20 cm s, Dp 10 cm Is. n.-1.5x 1010 cm-3 Depletion region n-type p-type a) (10 points) Calculate the excess electron concentration as a function of x in the p side (see the figure above). b) (5 points) Calculate the...
Can someone help solve this question step by step? Thanks!
Problem 4 (25 points) Consider a silicon pn junction at T-300 K, NA-ND- 1x101° cm3. The minority carrier lifetimes are τ n-0.01 μs and τ p-0.01 us. The junction is forwardbiased with Va 0.6V. The minority carrier diffusion coefficients are Dn-20 cm s, Dp 10 cm Is. n.-1.5x 1010 cm-3 Depletion region n-type p-type a) (10 points) Calculate the excess electron concentration as a function of x in the p...
P3. For an ideal abrupt silicon (Si) P*N diode with doping concentrations Na = 1 x 107 cm3 and N 1 x 105 cm. (a) Find the stored minority carriers density in the N-side neutral region (infinitely long comparing with Lp and Ln) when a forward bias of 1 V is applied. (b) Calculate the hole current density in the region of (a) at x, 0. (Assume the average diffusion length of hole is 5 um the average carrier life...
P3. For an ideal abrupt silicon (Si) P*N diode with doping concentrations Na = 1 x 107 cm3 and N 1 x 105 cm. (a) Find the stored minority carriers density in the N-side neutral region (infinitely long comparing with Lp and Ln) when a forward bias of 1 V is applied. (b) Calculate the hole current density in the region of (a) at x, 0. (Assume the average diffusion length of hole is 5 um the average carrier life...
Consider a bar of p-type silicon that is uniformly doped to a value of N, 2 x 10 cm at T- 300 K. The applied electric field is zero. A light source is incident on the end of the semiconductor as shown in Figure P6.19. The steady-state concentration of excess carriers generated at-O is op(0) on(0) 2 x 10 cm-. Assume the following Light p type pa .-1200 cm 2 /V-s, μ,-400 cm2 /V-s. To = 10-6 s, and T.-SX...
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