Excess electrons as minority carriers are extracted from a bar of p-type silicon having the dimensions shown in Figure 211a. The bar is uniformly doped with an acceptor concentration Na of 10^17 cm^-e. The excess electron concentration has a profile described by
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Excess electrons as minority carriers are extracted from a bar
of p-type silicon having the dimensions...
Consider a bar of p-type silicon that is uniformly doped to a value of N, 2...
Consider a bar of p-type silicon that is uniformly doped to a value of N, 2 x 10 cm at T- 300 K. The applied electric field is zero. A light source is incident on the end of the semiconductor as shown in Figure P6.19. The steady-state concentration of excess carriers generated at-O is op(0) on(0) 2 x 10 cm-. Assume the following Light p type pa .-1200 cm 2 /V-s, μ,-400 cm2 /V-s. To = 10-6 s, and T.-SX...
Q3. (25 points) A p-type (NA-1018 cm silicon slab of finite length L is in the...
Q3. (25 points) A p-type (NA-1018 cm silicon slab of finite length L is in the dark, with diffusive current flow only, under steady-state conditions. Significant improvements have been made, such that essentially no recombination occurs in the slab (r~oo). At x 0 the electron concentration is maintained (by injection from a contact) at 10 cm3. Atx L the excess electrons are extracted such that Anp(L) 0. i) Write the appropriate minority carrier diffusion equation. (ii) Solve to determine the...
1. An n-type silicon bar of length L is maintained under steady state conditions such that δpn(0)...
1. An n-type silicon bar of length L is maintained under steady state conditions such that δpn(0)-6pno-1012/cm3 and δpn(L)-0. The Si bar is uniformly doped with N.-1016/cm3 at room temperature. No other photo-generation of processes occurring inside the bar. a) Do low level injection conditions prevail? Explain b) Show the variation of minority carrier concentration with respect to x. c) How much is n(x)? d) What is the position of the quasi-Fermi level inside the bar at (i) x-0, and...
Problem 2 (25 points) In a silicon semiconductor, excess carriers are being generated at x -0...
Problem 2 (25 points) In a silicon semiconductor, excess carriers are being generated at x -0 as shown below. Assume NA 2x1015 cm3, N 0. The excess carrier concentration at x-0 is 1013 cm3 and the excess carrier concentration at x = Ln is 0 (Ln ls the electron diffusion length). lụs, are D,-25 cm2/s, D,-10 cm2/s. Assume the electric field is zero, ta T = 300K. ķT1e = 0.026V. tp Light NA 2x1015 cm3 a) (15 points) Write the...
Problem 4 (25 points) Consider a silicon pn junction at T-300 K, NA-ND- 1x101° cm3. The minority ...
Problem 4 (25 points) Consider a silicon pn junction at T-300 K, NA-ND- 1x101° cm3. The minority carrier lifetimes are τ n-0.01 μs and τ p-0.01 us. The junction is forwardbiased with Va 0.6V. The minority carrier diffusion coefficients are Dn-20 cm s, Dp 10 cm Is. n.-1.5x 1010 cm-3 Depletion region n-type p-type a) (10 points) Calculate the excess electron concentration as a function of x in the p side (see the figure above). b) (5 points) Calculate the...
Problem 4 (25 points) Consider a silicon pn junction at T-300 K, NA-ND- 1x101° cm3. The minority ...
Can someone help solve this question step by step? Thanks!
Problem 4 (25 points) Consider a silicon pn junction at T-300 K, NA-ND- 1x101° cm3. The minority carrier lifetimes are τ n-0.01 μs and τ p-0.01 us. The junction is forwardbiased with Va 0.6V. The minority carrier diffusion coefficients are Dn-20 cm s, Dp 10 cm Is. n.-1.5x 1010 cm-3 Depletion region n-type p-type a) (10 points) Calculate the excess electron concentration as a function of x in the p...
3. A silicon step junction has uniform impurity doping concentrations of N. 5 x 1015 cm-3 and Nd ...
3. A silicon step junction has uniform impurity doping concentrations of N. 5 x 1015 cm-3 and Nd = 1 x 1015 cm-, and a cross-sectional area of A-|0-4 cm2. Let tao -0.4 s and tpo 0.1 us. Consider the geometry in Figure.Calculate (a) the ideal reverse saturation current due to holes, (b) the ideal reverse saturation current due to electrons, (c) the hole concentration at a, if V V and (d) the electron current at x = x" +...
Assume that a uniform p-type region of silicon with length L-10 μm, μη-1400 cm2/V-s, and lifetime...
Assume that a uniform p-type region of silicon with length L-10 μm, μη-1400 cm2/V-s, and lifetime t 1 us at T 300 K is uniformly illuminated by photon flux G 1019/cm2s. Assume that that all carriers are extracted at x-L (such that Δη-0), while An-1014 /cm3 at x 0. Assume that Po An everwhere. Now consider the system after reaching a steady state. 2. Write down the simplest form of the minority carrier diffusion equation that accurately describes its behavior....
This is for solid state electronics: Problem 4: Excess electrons and holes are generated at the...
This is for solid state electronics: Problem 4: Excess electrons and holes are generated at the end of a Si bar (at x=0). The Si is homogeneously doped with P atoms to a concentration of 1017 cm-3. The minority carrier lifetime = 1 μs. The electron diffusion coefficient = 25 cm2/s The hole diffusion coefficient = 10 cm2/s The excess electron and hole concentrations at x=0 are equal to each other and are 1015 cm-3. (a) Write the formula (with...
Consider a bar of p-type silicon that is uniformly doped to a value of N, 2 x 10 cm at T- 300 K. The applied electric field is zero. A light source is incident on the end of the semiconductor as shown in Figure P6.19. The steady-state concentration of excess carriers generated at-O is op(0) on(0) 2 x 10 cm-. Assume the following Light p type pa .-1200 cm 2 /V-s, μ,-400 cm2 /V-s. To = 10-6 s, and T.-SX...
Q3. (25 points) A p-type (NA-1018 cm silicon slab of finite length L is in the dark, with diffusive current flow only, under steady-state conditions. Significant improvements have been made, such that essentially no recombination occurs in the slab (r~oo). At x 0 the electron concentration is maintained (by injection from a contact) at 10 cm3. Atx L the excess electrons are extracted such that Anp(L) 0. i) Write the appropriate minority carrier diffusion equation. (ii) Solve to determine the...
1. An n-type silicon bar of length L is maintained under steady state conditions such that δpn(0)-6pno-1012/cm3 and δpn(L)-0. The Si bar is uniformly doped with N.-1016/cm3 at room temperature. No other photo-generation of processes occurring inside the bar. a) Do low level injection conditions prevail? Explain b) Show the variation of minority carrier concentration with respect to x. c) How much is n(x)? d) What is the position of the quasi-Fermi level inside the bar at (i) x-0, and...
Problem 2 (25 points) In a silicon semiconductor, excess carriers are being generated at x -0 as shown below. Assume NA 2x1015 cm3, N 0. The excess carrier concentration at x-0 is 1013 cm3 and the excess carrier concentration at x = Ln is 0 (Ln ls the electron diffusion length). lụs, are D,-25 cm2/s, D,-10 cm2/s. Assume the electric field is zero, ta T = 300K. ķT1e = 0.026V. tp Light NA 2x1015 cm3 a) (15 points) Write the...
Problem 4 (25 points) Consider a silicon pn junction at T-300 K, NA-ND- 1x101° cm3. The minority carrier lifetimes are τ n-0.01 μs and τ p-0.01 us. The junction is forwardbiased with Va 0.6V. The minority carrier diffusion coefficients are Dn-20 cm s, Dp 10 cm Is. n.-1.5x 1010 cm-3 Depletion region n-type p-type a) (10 points) Calculate the excess electron concentration as a function of x in the p side (see the figure above). b) (5 points) Calculate the...
Can someone help solve this question step by step? Thanks!
Problem 4 (25 points) Consider a silicon pn junction at T-300 K, NA-ND- 1x101° cm3. The minority carrier lifetimes are τ n-0.01 μs and τ p-0.01 us. The junction is forwardbiased with Va 0.6V. The minority carrier diffusion coefficients are Dn-20 cm s, Dp 10 cm Is. n.-1.5x 1010 cm-3 Depletion region n-type p-type a) (10 points) Calculate the excess electron concentration as a function of x in the p...
3. A silicon step junction has uniform impurity doping concentrations of N. 5 x 1015 cm-3 and Nd = 1 x 1015 cm-, and a cross-sectional area of A-|0-4 cm2. Let tao -0.4 s and tpo 0.1 us. Consider the geometry in Figure.Calculate (a) the ideal reverse saturation current due to holes, (b) the ideal reverse saturation current due to electrons, (c) the hole concentration at a, if V V and (d) the electron current at x = x" +...
Assume that a uniform p-type region of silicon with length L-10 μm, μη-1400 cm2/V-s, and lifetime t 1 us at T 300 K is uniformly illuminated by photon flux G 1019/cm2s. Assume that that all carriers are extracted at x-L (such that Δη-0), while An-1014 /cm3 at x 0. Assume that Po An everwhere. Now consider the system after reaching a steady state. 2. Write down the simplest form of the minority carrier diffusion equation that accurately describes its behavior....
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