Homework Answers
Add Answer to:
1. An n-type silicon bar of length L is maintained under steady state conditions such that δpn(0)...
Q3. (25 points) A p-type (NA-1018 cm silicon slab of finite length L is in the...
Q3. (25 points) A p-type (NA-1018 cm silicon slab of finite length L is in the dark, with diffusive current flow only, under steady-state conditions. Significant improvements have been made, such that essentially no recombination occurs in the slab (r~oo). At x 0 the electron concentration is maintained (by injection from a contact) at 10 cm3. Atx L the excess electrons are extracted such that Anp(L) 0. i) Write the appropriate minority carrier diffusion equation. (ii) Solve to determine the...
Problem 3: pn Junction -- Carrier Concentration Profiles The steady-state carrier concentrations inside a Si pn step ju...
Problem 3: pn Junction -- Carrier Concentration Profiles The steady-state carrier concentrations inside a Si pn step junction diode maintained at room temperature are shown in the plot below: п or p (log scale Pp -106 10 102 a) Is the diode forward or reverse biased? Explain briefly. b) Do low-level injection conditions prevail in the quasi-neutral regions of the diode? Explain briefly. c) What are the p-side and n-side net dopant concentrations NA and ND, respectively? d) Determine the...
Excess electrons as minority carriers are extracted from a bar of p-type silicon having the dimensions...
Excess electrons as minority carriers are extracted from a bar
of p-type silicon having the dimensions shown in Figure 211a. The
bar is uniformly doped with an acceptor concentration Na of 10^17
cm^-e. The excess electron concentration has a profile described
by
211a. Excess electrons as minority carriers are extracted from a bar of p-type silicon having the dimensions shown in Figure 211a. The bar is uniformly doped with an acceptor concentration Na of 10 cm3. The excess electron concentration...
Assume a p-n step junction in silicon wi concentration of 2x1016,c? and the n-type material doped...
Assume a p-n step junction in silicon wi concentration of 2x1016,c? and the n-type material doped at 3X10-s,cm3 The intrinsic carrier density is 1.25X101°/cm and all dopants are fully ionized Assume that the effective density of states for silicon is 3.3x10 cm3 for the conduction band and 1.75x101 cm for the valence band. Assume that the temperature is 300K and silicon relative permittivity of 11.7 a. Compute the hole concentration on the n-side and electron concentration th the p-type material...
Assuming complete ionization, determine the equilibrium electron and hole concentrations inside a uniformly doped Si under the following conditions V. Assuming complete ionization, determine the equi...
Assuming complete ionization, determine the equilibrium electron
and hole concentrations inside a uniformly doped Si under the
following conditions
V. Assuming complete ionization, determine the equilibrium electron and hole concentration inside a uniformly doped Si under the following conditions: a) T= 200 K, N,-9 x 1015 /cm, ND-1016 /cm3 b) T= 450 K, N,-0, ND-1014 /cm3
V. Assuming complete ionization, determine the equilibrium electron and hole concentration inside a uniformly doped Si under the following conditions: a) T= 200 K,...
2. The earth is hit by a mysterious ray that momentarily wipes out all minority carriers....
2. The earth is hit by a mysterious ray that momentarily wipes out all minority carriers. Majority carriers are unaffected. Initially in equilibrium and not affected by room light, a uniformly doped silicon wafer sitting on your desk is struck by the ray at time t = 0. The wafer doping is N, = 1016 / cm3, , = 10-6 seconds, and T=300K. What is An at t = 0+? (t = 0+ is an imperceptible fraction of a second...
6. A long p-type Si bar, NA-5x1016 cm3, is optically excited and creates a low level of steady st...
6. A long p-type Si bar, NA-5x1016 cm3, is optically excited and creates a low level of steady state excess carriers at on the left side of the bar (x-o) creating a quasi-Fermi level separation of (E-Fp)-0.42 eV. The carriers diffuse to the right and decay exponentially. Electron and hole lifetimes are both 5 μs Also, it is room temperature, D,-18 cm2/s, Dn-36 cm3/s, and n#1.5x1010 /cm? what is the electron . concentration and current density (A/cm2) at x 50...
3. A silicon step junction has uniform impurity doping concentrations of N. 5 x 1015 cm-3 and Nd ...
3. A silicon step junction has uniform impurity doping concentrations of N. 5 x 1015 cm-3 and Nd = 1 x 1015 cm-, and a cross-sectional area of A-|0-4 cm2. Let tao -0.4 s and tpo 0.1 us. Consider the geometry in Figure.Calculate (a) the ideal reverse saturation current due to holes, (b) the ideal reverse saturation current due to electrons, (c) the hole concentration at a, if V V and (d) the electron current at x = x" +...
Assume that a uniform p-type region of silicon with length L-10 μm, μη-1400 cm2/V-s, and lifetime...
Assume that a uniform p-type region of silicon with length L-10 μm, μη-1400 cm2/V-s, and lifetime t 1 us at T 300 K is uniformly illuminated by photon flux G 1019/cm2s. Assume that that all carriers are extracted at x-L (such that Δη-0), while An-1014 /cm3 at x 0. Assume that Po An everwhere. Now consider the system after reaching a steady state. 2. Write down the simplest form of the minority carrier diffusion equation that accurately describes its behavior....
P3. For an ideal abrupt silicon (Si) P*N diode with doping concentrations Na = 1 x...
P3. For an ideal abrupt silicon (Si) P*N diode with doping concentrations Na = 1 x 107 cm3 and N 1 x 105 cm. (a) Find the stored minority carriers density in the N-side neutral region (infinitely long comparing with Lp and Ln) when a forward bias of 1 V is applied. (b) Calculate the hole current density in the region of (a) at x, 0. (Assume the average diffusion length of hole is 5 um the average carrier life...
Q3. (25 points) A p-type (NA-1018 cm silicon slab of finite length L is in the dark, with diffusive current flow only, under steady-state conditions. Significant improvements have been made, such that essentially no recombination occurs in the slab (r~oo). At x 0 the electron concentration is maintained (by injection from a contact) at 10 cm3. Atx L the excess electrons are extracted such that Anp(L) 0. i) Write the appropriate minority carrier diffusion equation. (ii) Solve to determine the...
Problem 3: pn Junction -- Carrier Concentration Profiles The steady-state carrier concentrations inside a Si pn step junction diode maintained at room temperature are shown in the plot below: п or p (log scale Pp -106 10 102 a) Is the diode forward or reverse biased? Explain briefly. b) Do low-level injection conditions prevail in the quasi-neutral regions of the diode? Explain briefly. c) What are the p-side and n-side net dopant concentrations NA and ND, respectively? d) Determine the...
Excess electrons as minority carriers are extracted from a bar
of p-type silicon having the dimensions shown in Figure 211a. The
bar is uniformly doped with an acceptor concentration Na of 10^17
cm^-e. The excess electron concentration has a profile described
by
211a. Excess electrons as minority carriers are extracted from a bar of p-type silicon having the dimensions shown in Figure 211a. The bar is uniformly doped with an acceptor concentration Na of 10 cm3. The excess electron concentration...
Assume a p-n step junction in silicon wi concentration of 2x1016,c? and the n-type material doped at 3X10-s,cm3 The intrinsic carrier density is 1.25X101°/cm and all dopants are fully ionized Assume that the effective density of states for silicon is 3.3x10 cm3 for the conduction band and 1.75x101 cm for the valence band. Assume that the temperature is 300K and silicon relative permittivity of 11.7 a. Compute the hole concentration on the n-side and electron concentration th the p-type material...
Assuming complete ionization, determine the equilibrium electron
and hole concentrations inside a uniformly doped Si under the
following conditions
V. Assuming complete ionization, determine the equilibrium electron and hole concentration inside a uniformly doped Si under the following conditions: a) T= 200 K, N,-9 x 1015 /cm, ND-1016 /cm3 b) T= 450 K, N,-0, ND-1014 /cm3
V. Assuming complete ionization, determine the equilibrium electron and hole concentration inside a uniformly doped Si under the following conditions: a) T= 200 K,...
2. The earth is hit by a mysterious ray that momentarily wipes out all minority carriers. Majority carriers are unaffected. Initially in equilibrium and not affected by room light, a uniformly doped silicon wafer sitting on your desk is struck by the ray at time t = 0. The wafer doping is N, = 1016 / cm3, , = 10-6 seconds, and T=300K. What is An at t = 0+? (t = 0+ is an imperceptible fraction of a second...
6. A long p-type Si bar, NA-5x1016 cm3, is optically excited and creates a low level of steady state excess carriers at on the left side of the bar (x-o) creating a quasi-Fermi level separation of (E-Fp)-0.42 eV. The carriers diffuse to the right and decay exponentially. Electron and hole lifetimes are both 5 μs Also, it is room temperature, D,-18 cm2/s, Dn-36 cm3/s, and n#1.5x1010 /cm? what is the electron . concentration and current density (A/cm2) at x 50...
3. A silicon step junction has uniform impurity doping concentrations of N. 5 x 1015 cm-3 and Nd = 1 x 1015 cm-, and a cross-sectional area of A-|0-4 cm2. Let tao -0.4 s and tpo 0.1 us. Consider the geometry in Figure.Calculate (a) the ideal reverse saturation current due to holes, (b) the ideal reverse saturation current due to electrons, (c) the hole concentration at a, if V V and (d) the electron current at x = x" +...
Assume that a uniform p-type region of silicon with length L-10 μm, μη-1400 cm2/V-s, and lifetime t 1 us at T 300 K is uniformly illuminated by photon flux G 1019/cm2s. Assume that that all carriers are extracted at x-L (such that Δη-0), while An-1014 /cm3 at x 0. Assume that Po An everwhere. Now consider the system after reaching a steady state. 2. Write down the simplest form of the minority carrier diffusion equation that accurately describes its behavior....
P3. For an ideal abrupt silicon (Si) P*N diode with doping concentrations Na = 1 x 107 cm3 and N 1 x 105 cm. (a) Find the stored minority carriers density in the N-side neutral region (infinitely long comparing with Lp and Ln) when a forward bias of 1 V is applied. (b) Calculate the hole current density in the region of (a) at x, 0. (Assume the average diffusion length of hole is 5 um the average carrier life...
Most questions answered within 3 hours.
-
Mr. and Mrs. Brown report taxable income of $130,000 in 2018. In
addition, they report the...
asked 1 hour ago -
You capture data by having 8 people fill in 30 small dots on a
piece of...
asked 4 hours ago -
What are the z-values such that 70% of the area lies in the
middle of the...
asked 6 hours ago -
You borrow $29,500 to purchase a brand new car. The interest
rate is 6%, and the...
asked 6 hours ago -
The amount of time it takes an asteroid, whose average distance
from the Sun is 4.70...
asked 6 hours ago -
A 0.289 kg mass slides on a frictionless floor with a speed of
1.34 m/s. The...
asked 6 hours ago -
15.A box contains five red balls, three green balls, and two
yellow balls. Suppose you select...
asked 9 hours ago -
Assume you are given the following for Stackelberg industries:
Return on Assets (ROA) = 8%
Debt...
asked 8 hours ago -
an engineer proposes to use mmWave in 5G network to
increase data rate.
What are the...
asked 8 hours ago -
Explain the idea behind using SEMIJOIN in distributed
query processing.
asked 8 hours ago -
why
is context important in selecting and applying guidelines and
principles for interface design?
illustrate your...
asked 8 hours ago -
In a certain board game, a player rolls two fair six-sided dice
until the player rolls...
asked 9 hours ago