Assuming complete ionization, determine the equilibrium electron and hole concentrations inside a uniformly doped Si under the following conditions
Homework Answers
Add Answer to:
Assuming complete ionization, determine the equilibrium electron and hole concentrations inside a uniformly doped Si under the following conditions V. Assuming complete ionization, determine the equi...
Determine the equilibrium electron and hole concentration inside a uniformly doped sample of Si under the...
Determine the equilibrium electron and hole concentration inside a uniformly doped sample of Si under the following conditions: 4. (a) T 300 K, NA ND, N 1016/cm3 (b) T = 450 K, N,-0, ND-1014/cm 3 (You can use the necessary data from Fig. 2.20 for your calculation.)
Detailed solutions needed, thank you! 5- Determine the equilibrium electron and hole concentrations inside a uniformly...
Detailed solutions needed, thank you!
5- Determine the equilibrium electron and hole concentrations inside a uniformly doped under the following conditions: (a) Room temperature, NA << ND, ND = 10°/cm ; (b) Room temperature, NA 1016/cm3, ND « NA; (c) Room temperature, NA = 9 x 1015/cm3, ND = 1016/cm3; (d) T = 450 K, NA = 0, ND = 1014/cm3; (e) T = 650 K, NA = 0, ND = 1014/cm3. sample of Si
2. A GaAs semiconductor at T 300 K is uniformly doped with NA 1016 cm3 and...
2. A GaAs semiconductor at T 300 K is uniformly doped with NA 1016 cm3 and No 0. The GaAs is illuminated with a light source at t = 0 s, resulting in a uniform generation rate of electron hole pairs g' 1020 cm . The electric field is zero. a) Give the analytic expression for the excess-carrier concentration δn(t) versus the time t>0s b) The steady state excess carrier concentration is found to be on( is the minority carrier...
1. a. Find the main error in each of the band diagrams shown below. For all...
1. a. Find the main error in each of the band diagrams shown below. For all of the band diagrams Ny 1019/cm3, Ne- 1019/cm3, ni = 3 x 108/cm". E,-1.25 eV, T = 300 K. Ef Ef EFi Main error: Main error: Main error: Main error: Consider a semiconductor sample with the following characteristics: EG 1.25 eV, T 300 K, Nd 5 x 101*/cm3, Na 1014/cm3, N.-1019/cm3, N.-1019/cm3, ni-3 × 108/cm3. Assume complete ionization b. Find the equilibrium electron and...
3. A silicon npn bipolar transistor is uniformly doped and biased in the forward active region wi...
3. A silicon npn bipolar transistor is uniformly doped and biased in the forward active region with the base-collector junction reverse biased by 2.5 V. The metallurgical base width is 1.5 μm. The emitter, base collector doping concentrations are 5 × 1017, 1016, 2 × 1015 cm-3 respectively. a. At T-300 K, calculate the base-emitter voltage at which the minority carrier electron concentration at x-0 is 20% of the majority carrier hole concentration. At this voltage calculate the minority carrier...
P4. a. Consider Si doped with P at 2x10^16 cm^-3. determine the carrier concentrations ni, p,...
P4. a. Consider Si doped with P at 2x10^16 cm^-3. determine the carrier concentrations ni, p, and n at T = 300 K. b. Consider a semiconductor with ni = 2.4x10^13cm-3 that is doped such that ND=5x10^13cm^-3. Determine the carrier concentrations n and p. c. Consider a compensation Ge semiconductor with ni = 2.4x10^13 cm^-3 doped at concentration NA=5x10^13 cm^-3. Determine the thermal equilibrium carrier concentration n and p.
1. An n-type silicon bar of length L is maintained under steady state conditions such that δpn(0)...
1. An n-type silicon bar of length L is maintained under steady state conditions such that δpn(0)-6pno-1012/cm3 and δpn(L)-0. The Si bar is uniformly doped with N.-1016/cm3 at room temperature. No other photo-generation of processes occurring inside the bar. a) Do low level injection conditions prevail? Explain b) Show the variation of minority carrier concentration with respect to x. c) How much is n(x)? d) What is the position of the quasi-Fermi level inside the bar at (i) x-0, and...
1252 407 3. At 300 K the electron mobility in n-type silicon in cm?N.s can be...
1252 407 3. At 300 K the electron mobility in n-type silicon in cm?N.s can be approximated as un = 88+ - 0.88*n where N is 1+1.26 X 1017 the total ionized impurity concentration /cm? At 300 K the hole mobility in p-type silicon in cm N.s can be approximated as Hp = 54 + 5.88xN where N is the total ionized impurity concentration /cm3. Use these equations to generate plots of electron and hole mobility in silicon as a...
3. A silicon step junction has uniform impurity doping concentrations of N. 5 x 1015 cm-3 and Nd ...
3. A silicon step junction has uniform impurity doping concentrations of N. 5 x 1015 cm-3 and Nd = 1 x 1015 cm-, and a cross-sectional area of A-|0-4 cm2. Let tao -0.4 s and tpo 0.1 us. Consider the geometry in Figure.Calculate (a) the ideal reverse saturation current due to holes, (b) the ideal reverse saturation current due to electrons, (c) the hole concentration at a, if V V and (d) the electron current at x = x" +...
Si sample doped with donors 101°cm-3 initially at room temperature 300 °K (n 31010 cm. Later it i...
Si sample doped with donors 101°cm-3 initially at room temperature 300 °K (n 31010 cm. Later it is excited optically as such 1019 cm-3electron-hole pairs are produced in one second uniformly in the sample. Si band gap energy isEg-1.11 eV and the recombination for hole electron life-time10 μs. Hint may use results of question 1 above. Draw appropriate figures and mark related levels! a) Calculate the equilibrium Fermi level with respect to conduction band edge Ec b) Calculate the equilibrium...
Determine the equilibrium electron and hole concentration inside a uniformly doped sample of Si under the following conditions: 4. (a) T 300 K, NA ND, N 1016/cm3 (b) T = 450 K, N,-0, ND-1014/cm 3 (You can use the necessary data from Fig. 2.20 for your calculation.)
Detailed solutions needed, thank you!
5- Determine the equilibrium electron and hole concentrations inside a uniformly doped under the following conditions: (a) Room temperature, NA << ND, ND = 10°/cm ; (b) Room temperature, NA 1016/cm3, ND « NA; (c) Room temperature, NA = 9 x 1015/cm3, ND = 1016/cm3; (d) T = 450 K, NA = 0, ND = 1014/cm3; (e) T = 650 K, NA = 0, ND = 1014/cm3. sample of Si
2. A GaAs semiconductor at T 300 K is uniformly doped with NA 1016 cm3 and No 0. The GaAs is illuminated with a light source at t = 0 s, resulting in a uniform generation rate of electron hole pairs g' 1020 cm . The electric field is zero. a) Give the analytic expression for the excess-carrier concentration δn(t) versus the time t>0s b) The steady state excess carrier concentration is found to be on( is the minority carrier...
1. a. Find the main error in each of the band diagrams shown below. For all of the band diagrams Ny 1019/cm3, Ne- 1019/cm3, ni = 3 x 108/cm". E,-1.25 eV, T = 300 K. Ef Ef EFi Main error: Main error: Main error: Main error: Consider a semiconductor sample with the following characteristics: EG 1.25 eV, T 300 K, Nd 5 x 101*/cm3, Na 1014/cm3, N.-1019/cm3, N.-1019/cm3, ni-3 × 108/cm3. Assume complete ionization b. Find the equilibrium electron and...
3. A silicon npn bipolar transistor is uniformly doped and biased in the forward active region with the base-collector junction reverse biased by 2.5 V. The metallurgical base width is 1.5 μm. The emitter, base collector doping concentrations are 5 × 1017, 1016, 2 × 1015 cm-3 respectively. a. At T-300 K, calculate the base-emitter voltage at which the minority carrier electron concentration at x-0 is 20% of the majority carrier hole concentration. At this voltage calculate the minority carrier...
1. An n-type silicon bar of length L is maintained under steady state conditions such that δpn(0)-6pno-1012/cm3 and δpn(L)-0. The Si bar is uniformly doped with N.-1016/cm3 at room temperature. No other photo-generation of processes occurring inside the bar. a) Do low level injection conditions prevail? Explain b) Show the variation of minority carrier concentration with respect to x. c) How much is n(x)? d) What is the position of the quasi-Fermi level inside the bar at (i) x-0, and...
1252 407 3. At 300 K the electron mobility in n-type silicon in cm?N.s can be approximated as un = 88+ - 0.88*n where N is 1+1.26 X 1017 the total ionized impurity concentration /cm? At 300 K the hole mobility in p-type silicon in cm N.s can be approximated as Hp = 54 + 5.88xN where N is the total ionized impurity concentration /cm3. Use these equations to generate plots of electron and hole mobility in silicon as a...
3. A silicon step junction has uniform impurity doping concentrations of N. 5 x 1015 cm-3 and Nd = 1 x 1015 cm-, and a cross-sectional area of A-|0-4 cm2. Let tao -0.4 s and tpo 0.1 us. Consider the geometry in Figure.Calculate (a) the ideal reverse saturation current due to holes, (b) the ideal reverse saturation current due to electrons, (c) the hole concentration at a, if V V and (d) the electron current at x = x" +...
Si sample doped with donors 101°cm-3 initially at room temperature 300 °K (n 31010 cm. Later it is excited optically as such 1019 cm-3electron-hole pairs are produced in one second uniformly in the sample. Si band gap energy isEg-1.11 eV and the recombination for hole electron life-time10 μs. Hint may use results of question 1 above. Draw appropriate figures and mark related levels! a) Calculate the equilibrium Fermi level with respect to conduction band edge Ec b) Calculate the equilibrium...
Most questions answered within 3 hours.
-
An MNE is this kind of industry when competition in one country
is essentially independent of...
asked 1 hour ago -
. For this set of questions, determine what
proportion of a normal distribution is located betweeneach...
asked 1 hour ago -
A college student is employed as a door-to-door newspaper
salesman. Historical data suggests that the student...
asked 2 hours ago -
MATLAB HW 11 problem using Switch Case and Input commands
Write a script file that calculates...
asked 2 hours ago -
Considering gravitational time dilation, calculate the time that
passes in Earth’s surface while 1 hour passes...
asked 3 hours ago -
Minitab Problem: Take the Lake Hume June rainfall data and find
use the processes outlined in...
asked 3 hours ago -
X Company is trying to decide whether to continue using old
equipment to make Product A...
asked 3 hours ago -
IN PYTHON ONLY !! Program 2: Re-work
program #5 (WeeklyHours) from the previous assignment such that...
asked 4 hours ago -
The average length of time between arrivals at a turnpike
toll-booth is 26 seconds. What is...
asked 6 hours ago -
(a) A piston at 6.1 atm contains a gas that occupies a volume of
3.5 L....
asked 7 hours ago -
Please answer true or false. Words
cannot be changed or added in to make it true...
asked 7 hours ago -
An empty test tube weighs 15.923 grams. Then,
MgCl2•6H2O is added into the test tube. After...
asked 7 hours ago