P4. a. Consider Si doped with P at 2x10^16 cm^-3. determine the carrier concentrations ni, p,...
P4.
a. Consider Si doped with P at 2x10^16 cm^-3. determine the carrier concentrations ni, p, and n at T = 300 K.
b. Consider a semiconductor with ni = 2.4x10^13cm-3 that is doped such that ND=5x10^13cm^-3. Determine the carrier concentrations n and p.
c. Consider a compensation Ge semiconductor with ni = 2.4x10^13 cm^-3 doped at concentration NA=5x10^13 cm^-3. Determine the thermal
equilibrium carrier concentration n and p.
Homework Answers
Add Answer to:
P4.
a. Consider Si doped with P at 2x10^16 cm^-3. determine the
carrier concentrations ni, p,...
Applied quantum mechanics 1. Calculate the carrier concentrations (p and n) for Si at 300k for...
Applied quantum mechanics
1. Calculate the carrier concentrations (p and n) for Si at
300k for the following doping concentrations:
2.
(a) ND = 1015/cm3
(b) NA = 1018/cm3
(c) ND = 5 x 1017/cm3
Calculate the majority and minority carriers for each side of
an N+P junction if ND = 2 x 1017/cm3 for the n-side, and NA =
1014/cm3 for the p-side.
Assume the semiconductor is Si and the temperature is
300K.
3. Determine the energy of:
(a)...
P4. Find the resistivity at T 300 K for a silicon sample doped with 1 x 10cm of phosphorus (P) atoms, 8.5 x 10 cm o...
P4. Find the resistivity at T 300 K for a silicon sample doped with 1 x 10cm of phosphorus (P) atoms, 8.5 x 10 cm of arsenic (As) atoms, and 1.2 x 103 cm3 of boron (B) atoms. Assume that the impurities are completely ionized and the mobilities are μ,-1500 cm2/V-s, μ,-500 cm2/V-s, independent of impurity concentrations. Also assume intrinsic carrier concentration of Si n 1.5 x 10 cm). Hint!!; we can usually use the rule for compensated semiconductors as...
If a block of Si is doped with 10^17 Boron atom/cm^3 and 5X10^16 Arsenic atoms/cm^3, (a)...
If a block of Si is doped with 10^17 Boron atom/cm^3 and 5X10^16 Arsenic atoms/cm^3, (a) Calculate the electron (n) and hole (p) concentration at 300°K. (b) Calculate the Fermi level (Ef- Ev) at 300°K. Sketch the band diagram and Fermi level. (c) Estimate the conductivity σ of the sample in part (a).
Problem 3: pn Junction -- Carrier Concentration Profiles The steady-state carrier concentrations inside a Si pn step ju...
Problem 3: pn Junction -- Carrier Concentration Profiles The steady-state carrier concentrations inside a Si pn step junction diode maintained at room temperature are shown in the plot below: п or p (log scale Pp -106 10 102 a) Is the diode forward or reverse biased? Explain briefly. b) Do low-level injection conditions prevail in the quasi-neutral regions of the diode? Explain briefly. c) What are the p-side and n-side net dopant concentrations NA and ND, respectively? d) Determine the...
1. (25 pts) T=300K. Consider a uniformly doped silicon PN junction with doping concentrations N, =...
1. (25 pts) T=300K. Consider a uniformly doped silicon PN junction with doping concentrations N, = 3x10 cm and Na = 2x10 cm. Calculate Is i LN3x10 cm, Lp = 5x10 cm, and A = 10 cm. If the applied voltage is 0.68 volts, what is the current density?
Assuming complete ionization, determine the equilibrium electron and hole concentrations inside a uniformly doped Si under the following conditions V. Assuming complete ionization, determine the equi...
Assuming complete ionization, determine the equilibrium electron
and hole concentrations inside a uniformly doped Si under the
following conditions
V. Assuming complete ionization, determine the equilibrium electron and hole concentration inside a uniformly doped Si under the following conditions: a) T= 200 K, N,-9 x 1015 /cm, ND-1016 /cm3 b) T= 450 K, N,-0, ND-1014 /cm3
V. Assuming complete ionization, determine the equilibrium electron and hole concentration inside a uniformly doped Si under the following conditions: a) T= 200 K,...
Determine the equilibrium electron and hole concentration inside a uniformly doped sample of Si under the...
Determine the equilibrium electron and hole concentration inside a uniformly doped sample of Si under the following conditions: 4. (a) T 300 K, NA ND, N 1016/cm3 (b) T = 450 K, N,-0, ND-1014/cm 3 (You can use the necessary data from Fig. 2.20 for your calculation.)
Problem 3: Dopant Freezeout a) Consider a Si sample doped with arsenic (As) to a concentration 1 ...
please use knowledge of semiconductor device and fundamentals
solving these problem. thanks!
Problem 3: Dopant Freezeout a) Consider a Si sample doped with arsenic (As) to a concentration 1 X 101" cm. Estimate the temperature at which only 50% of the As atoms would be ionized. (You will need to solve a transcendental equation by iteration.) Note that the intrinsic carrier concentration has significant temperature dependence (derived on pg. 55 of Pierret's book): 3/2 19 m, m m, mo o(300...
Finish Part 2 calculations with the data and equations given above. Intrinsic Carrier Concentrations: n 2e6...
Finish Part 2 calculations with the data and equations given
above.
Intrinsic Carrier Concentrations: n 2e6 cm3 and Eg 1.42eV for GaAs n 1e10 cm3 and Eg 1.1eV for Si n 2e13 cm3 and Eg = 0.7eV for Ge n 0 and Eg 3.4eV for GaN Charge Neutrality Equation and NP product: 1/2 ((NA-Np) ni (NA-No) p = 2 2 . 1/2 (No-NA) (No- n 2 2 Fermi Energy Level Equation: E,-E, kT In =-kT In Part 2, Calculation: For...
P2.1. Determine the room temperature carrier concentrations and resistiv- ity for silicon doped with phosphorus to...
P2.1. Determine the room temperature carrier concentrations and resistiv- ity for silicon doped with phosphorus to a concentration of 107 cm-3.
Applied quantum mechanics
1. Calculate the carrier concentrations (p and n) for Si at
300k for the following doping concentrations:
2.
(a) ND = 1015/cm3
(b) NA = 1018/cm3
(c) ND = 5 x 1017/cm3
Calculate the majority and minority carriers for each side of
an N+P junction if ND = 2 x 1017/cm3 for the n-side, and NA =
1014/cm3 for the p-side.
Assume the semiconductor is Si and the temperature is
300K.
3. Determine the energy of:
(a)...
P4. Find the resistivity at T 300 K for a silicon sample doped with 1 x 10cm of phosphorus (P) atoms, 8.5 x 10 cm of arsenic (As) atoms, and 1.2 x 103 cm3 of boron (B) atoms. Assume that the impurities are completely ionized and the mobilities are μ,-1500 cm2/V-s, μ,-500 cm2/V-s, independent of impurity concentrations. Also assume intrinsic carrier concentration of Si n 1.5 x 10 cm). Hint!!; we can usually use the rule for compensated semiconductors as...
Problem 3: pn Junction -- Carrier Concentration Profiles The steady-state carrier concentrations inside a Si pn step junction diode maintained at room temperature are shown in the plot below: п or p (log scale Pp -106 10 102 a) Is the diode forward or reverse biased? Explain briefly. b) Do low-level injection conditions prevail in the quasi-neutral regions of the diode? Explain briefly. c) What are the p-side and n-side net dopant concentrations NA and ND, respectively? d) Determine the...
1. (25 pts) T=300K. Consider a uniformly doped silicon PN junction with doping concentrations N, = 3x10 cm and Na = 2x10 cm. Calculate Is i LN3x10 cm, Lp = 5x10 cm, and A = 10 cm. If the applied voltage is 0.68 volts, what is the current density?
Assuming complete ionization, determine the equilibrium electron
and hole concentrations inside a uniformly doped Si under the
following conditions
V. Assuming complete ionization, determine the equilibrium electron and hole concentration inside a uniformly doped Si under the following conditions: a) T= 200 K, N,-9 x 1015 /cm, ND-1016 /cm3 b) T= 450 K, N,-0, ND-1014 /cm3
V. Assuming complete ionization, determine the equilibrium electron and hole concentration inside a uniformly doped Si under the following conditions: a) T= 200 K,...
Determine the equilibrium electron and hole concentration inside a uniformly doped sample of Si under the following conditions: 4. (a) T 300 K, NA ND, N 1016/cm3 (b) T = 450 K, N,-0, ND-1014/cm 3 (You can use the necessary data from Fig. 2.20 for your calculation.)
please use knowledge of semiconductor device and fundamentals
solving these problem. thanks!
Problem 3: Dopant Freezeout a) Consider a Si sample doped with arsenic (As) to a concentration 1 X 101" cm. Estimate the temperature at which only 50% of the As atoms would be ionized. (You will need to solve a transcendental equation by iteration.) Note that the intrinsic carrier concentration has significant temperature dependence (derived on pg. 55 of Pierret's book): 3/2 19 m, m m, mo o(300...
Finish Part 2 calculations with the data and equations given
above.
Intrinsic Carrier Concentrations: n 2e6 cm3 and Eg 1.42eV for GaAs n 1e10 cm3 and Eg 1.1eV for Si n 2e13 cm3 and Eg = 0.7eV for Ge n 0 and Eg 3.4eV for GaN Charge Neutrality Equation and NP product: 1/2 ((NA-Np) ni (NA-No) p = 2 2 . 1/2 (No-NA) (No- n 2 2 Fermi Energy Level Equation: E,-E, kT In =-kT In Part 2, Calculation: For...
P2.1. Determine the room temperature carrier concentrations and resistiv- ity for silicon doped with phosphorus to a concentration of 107 cm-3.
Most questions answered within 3 hours.
-
1. Methods of collecting data - Experiments and direct
observation
In each of the following situations,...
asked 1 minute from now -
What is the density of a substance that takes up 3.4e3 cubic cm
and weighs 1.96...
asked 8 minutes ago -
Consider a single wire loop of radius a. Calculate the magnetic
field B(z) along the axis...
asked 5 minutes ago -
For each of the compounds listed below you must draw the Lewis
dot structure in the...
asked 7 minutes ago -
1. Hypothesize in what type of environments it would be
advantageous for a protist to be...
asked 7 minutes ago -
Each protein is composed of a maximum of ____________ different
amino acids in varying numbers and...
asked 15 minutes ago -
The mayor of a town has proposed a plan for the construction of
a new community....
asked 26 minutes ago -
2. KopyKat is a firm that specializes in printing business cards
using the latest laser technology....
asked 45 minutes ago -
What type of stock pays dividends in arrears?
A.
Nonminus−cumulative
preferred stock
B.
Cumulative preferred stock...
asked 43 minutes ago -
Discuss what issues you see as needing to be addressed in an
organization in order to...
asked 45 minutes ago -
Why does varying input frequency to a buck converter affect the
magnitude of the output voltage...
asked 48 minutes ago -
Given the following reduction half-reactions:
Fe3+(aq)+e−→Fe2+(aq)
E∘red=+0.77V
S2O2−6(aq)+4H+(aq)+2e−→2H2SO3(aq)
E∘red=+0.60V
N2O(g)+2H+(aq)+2e−→N2(g)+H2O(l)
E∘red=−1.77V
VO+2(aq)+2H+(aq)+e−→VO2+(aq)+H2O(l)
E∘red=+1.00V
Write balanced chemica
asked 49 minutes ago